Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Concept

RF power amplifier

Related publications (30)

Frontiers in the Application of RF Vacuum Electronics

Timothy Goodman

The application of radio frequency (RF) vacuum electronics for the betterment of the human condition began soon after the invention of the first vacuum tubes in the 1920s and has not stopped since. Today, microwave vacuum devices are powering important app ...

2023

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In this work we propose and experimentally validate a relaxation spiking oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible me ...

IEEE2021

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera, Halil Kerim Yildirim

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

IEEE2021

A cryogenic electro-optic interconnect for superconducting devices

Tobias Kippenberg, Anton Lukashchuk, Nathan Rafaël Bernier, Liu Qiu, Itay Shomroni, Amir Youssefi, Philipp Johann Uhrich

A major challenge to the scalability of cryogenic computing platforms is the heat load associated with the growing number of electrical cable connections between the superconducting circuitry and the room-temperature environment. Compared with electrical c ...

2021

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Towards Advanced Fusion Gyrotrons: 2018 Update on Activities within EUROfusion

Stefano Alberti, Minh Quang Tran, Ioannis Pagonakis

During the ongoing pre-concept phase (2014 - 2020) for a possible future European DEMOnstration Fusion Power Plant (DEMO) the activities within EUROfusion WP HCD EC Gyrotron R&D and Advanced Developments are focusing on options for near-term solutions, and ...

E D P SCIENCES2019

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019

Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani, Giovanni Santoruvo

Microwave zero-bias rectifiers are fast devices capable of rectifying RF signals without applied bias, which have applications ranging from RF power detection to THz imaging systems. Here we present gated nanowire field-effect rectifiers (NW-FERs) fabricat ...

2019

Exposure assessment of body-implanted capsules in the 100-MHz–5-GHz range

Anja Skrivervik, Denys Nikolayev

Body-implanted bioelectronics rely on antennas to interface with external on- or off-body equipment. For a given input power, the antenna type and operating frequency significantly affect the power dissipation in tissues. This study addresses the exposure ...

2019

Nonreciprocal Gain in Non-Hermitian Time-Floquet Systems

Romain Christophe Rémy Fleury, Theodoros Koutserimpas

We explore the unconventional wave scattering properties of non-Hermitian systems in which amplification or damping are induced by time-periodic modulation. These non-Hermitian time-Floquet systems are capable of nonreciprocal operations in the frequency d ...

2018

Adaptive Receiver Design for High Speed Optical Communication

Ilter Ozkaya

Conventional input/output (IO) links consume power, independent of changes in the bandwidth demand by the system they are deployed in. As the system is designed to satisfy the peak bandwidth demand, most of the time the IO links are idle but still consumin ...

EPFL2018

Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling

Gunjan Agarwal

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for ...

American Society of Mechanical Engineers2017

Optical Sinc-Shaped Nyquist Pulse Source Based on a Single Mach-Zehnder Modulator

Camille Sophie Brès, Jianqi Hu, Simon Julien Fabbri

We present a precise and flexible Sinc-shaped Nyquist pulse source based on a single Mach-Zehnder modulator. The use of multi-harmonic RF signals provides direct control on the Nyquist pulse train generation. The variable comb source is demonstrated by sel ...

2017

A remotely powered fully integrated low power class-E power amplifier for implantable sensor systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...

Springer2016

Characterization and modeling of nanoscale MOSFET for ultra-low power RF IC design

Maria-Anna Chalkiadaki

The evolution and characteristics of the electronics is directly linked to the technological and societal progress. Today, there is a huge variety of electronic solutions offered, with the RF low-power systems, such as wireless sensor networks, wireless bo ...

EPFL2016

Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits

Christian Enz, Alessandro Pezzotta

This paper presents the simplified charge-based EKV MOSFET model and shows that it can be used for advanced CMOS processes despite its very few parameters. The concept of inversion coefficient is then presented as an essential design parameter that spans t ...

IEEE2016

Analog Programmable Distance Calculation Circuit for Winner Takes All Neural Network Realized in the CMOS Technology

Rafal Tomasz Dlugosz

This paper presents a programmable analog current-mode circuit used to calculate the distance between two vectors of currents, following two distance measures. The Euclidean (L2) distance is commonly used. However, in many situations, it can be replaced wi ...

Institute of Electrical and Electronics Engineers2016

A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the req ...

Spie-Int Soc Optical Engineering2015

A closed-form expression for the total degradation in OFDM systems

Stefano Rosati

In this paper, building upon Bussgang's theorem, we present a new expression for the total degradation (TD) in OFDM systems. This novel expression is applicable to any high power amplifier (HPA) model. In case of ideal clipping HPA model and for particular ...

Wiley-Blackwell2015

Upgrade of a 30 kV/10 mA anode power supply for triode type gyrotron

Stefano Alberti, Jean-Philippe Hogge, Damien Fasel, Ugo Siravo, Jérémie Dubray, Philippe Marmillod, Albert Perez, Blaise Marlétaz

The RF power of a gyrotron with a triode type magnetron-injection-gun (MIG) can be directly controlled via the voltage applied between its anode and its cathode. Hence, the performance of this type of gyrotron relies directly on the possibilities offered b ...

Elsevier Science Sa2015