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A regrowth-free sub-THz HEMT is demonstrated using a periodic contact scheme that transforms conventional linear contacts into a configuration with far better contact resistance ( R-C ). This method yielded consistently low R-C down to 0.15 Omega mm . Furthermore, this technique is based on a Au-free low-temperature annealing metalization (Ti/Al), which results in extremely smooth edges, allowing for sub-500 nm channel scaling. These features enabled - for the first time - the demonstration of regrowth-free GaN RF HEMT with f(t)/f(max) of 176/403 GHz. These results are comparable to the best GaN HEMTs with similar geometry, highlighting the enormous potential of periodic contact structures for high performance RF and sub-THz devices.