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Related publications (25)

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Rebasing I/O for Scientific Computing: Leveraging Storage Class Memory in an IBM BlueGene/Q Supercomputer

Felix Schürmann, Pramod Shivaji Kumbhar, Fabien Jonathan Delalondre, Lars Schneidenbach, Alessandro Curioni, John Anthony Biddiscombe, Miguel Angel Gila Arrondo, Peter Morjan, Robert Germain, Blake Fitch

Storage class memory is receiving increasing attention for use in HPC systems for the acceleration of intensive IO operations. We report a particular instance using SLC FLASH memory integrated with an IBM BlueGene/Q supercomputer at scale (Blue Gene Active ...

Springer2014

A (Nearly) Free Lunch : Extending NAND Flash Lifetime by Exploiting Neglected Physical Properties

Xavier Jimenez

NAND flash is a key storage technology in modern computing systems. Without it, many devices would probably not exist today or would at least not benefit from as many features. The very large success of this technology motivated massive efforts to scale it ...

EPFL2014

Energy/Reliability Trade-Offs in Low-Voltage ReRAM-Based Non-Volatile Flip-Flop Design

Giovanni De Micheli, Yusuf Leblebici, Andreas Peter Burg, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Pascal Andreas Meinerzhagen

The total power budget of Ultra-Low Power (ULP) VLSI Systems-on-Chip (SoCs) is often dominated by the leakage power of embedded memories as well as status registers. On the one hand, supply voltage scaling down to the near-threshold (near-VT

Institute of Electrical and Electronics Engineers2014

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Mohamed Haykel Ben Jamaa

Emerging Non-Volatile Memories (eNVMs) such as Phase-Change RAMs (PCRAMs) or Oxide-based Resistive RAMs (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of buildin ...

Institute of Electrical and Electronics Engineers2013

Polarisation reversal in ferroelectric PVDF and PZT films

Roman Gysel

Ferroelectrics are characterised by a spontaneous polarisation that can be reversed by an external electric field. The stability of the polarisation states and the possibility for controlled switching between the states render ferroelectric materials very ...

EPFL2008