Publication

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Giovanni De Micheli, Davide Sacchetto, Mohamed Haykel Ben Jamaa, Pierre-Emmanuel Julien Marc Gaillardon
2013
Journal Articles

Abstract

Emerging Non-Volatile Memories (eNVMs) such as Phase-Change RAMs (PCRAMs) or Oxide-based Resistive RAMs (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of building blocks for Field-Programmable Gate Arrays (FPGAs) using eNVMs. We propose an eNVM-based configuration point, a look-up table structure with reduced programming complexity and a high-performance switchbox arrangement. We show that these blocks yield an improvement in area and write time of up to 3x and 33x respectively vs. a regular Flash implementation. By integrating the designed blocks in a FPGA, we demonstrate an area and delay reduction of up to 28% and 34% respectively on a set of benchmark circuits. These reductions are due to the eNVM 3-D integration and to their low on-resistance state value. Finally, we survey many flavors of the technologies and we show that the best results in terms of area and delay are obtained with Pt/TiO2/Pt stack, while the lowest leakage power is achieved by InGeTe stack.

Official source

https://infoscience.epfl.ch/entities/publication/db029cef-9335-4965-a5d9-1fe987351939

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Giovanni De Micheli, Davide Sacchetto, Mohamed Haykel Ben Jamaa, Pierre-Emmanuel Julien Marc Gaillardon
2013
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/db029cef-9335-4965-a5d9-1fe987351939

About this result

Related concepts (27)

Computer memory

Computer memory stores information, such as data and programs for immediate use in the computer. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage which is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance.

Dynamic random-access memory

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.

Non-volatile memory

Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).

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