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Concept

Emitter-coupled logic

Related publications (26)

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

Mahsa Shoaran, Yasemin Engür

This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such as neural interfa ...

ArXiv2023

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Alexandre Schmid, Mehdi Saberi

This paper presents a new power-efficient and high-speed voltage level shifter. In the proposed structure, the existing contentions at the internal nodes are reduced using auxiliary transistors and feedback networks, leading to a significant reduction in t ...

IEEE2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Ultra-High-Voltage (7-kV) Bidirectional Flyback Converter Used to Drive Capacitive Actuators

Yves Perriard, Alexis Boegli, Morgan Almanza, Raphaël Johannes Charles Mottet

Dielectric elastomer actuators (DEAs) have extremely advantageous characteristics such as lightness, compactness, flexibility, and large displacements. However, in order to operate, they can require voltages in the order of several thousands of volts. Thus ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Multiplier Architectures: Challenges and Opportunities with Plasmonic-based Logic

Giovanni De Micheli, Mathias Soeken, Eleonora Testa

Emerging technologies such as plasmonics and photonics are promising alternatives to CMOS for high throughput applications, thanks to their waveguide's low power consumption and high speed of computation. Besides these qualities, these novel technologies a ...

2020

Comparison of Different Precision Pseudo Resistor Realizations in the DC-Feedback of Capacitive Transimpedance Amplifiers

Georg Fantner, Jens Anders

In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise ...

IEEE2019

Design of approximate and precision-scalable circuits for embedded multimedia and neural-network processing

Vincent Frédéric Camus

Density, speed and energy efficiency of integrated circuits have been increasing exponentially for the last four decades following Moore's law. However, power and reliability pose several challenges to the future of technology scaling. Approximate computin ...

EPFL2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

Triboelectric‐TFT Flip‐Flop for Bistable Latching of Dielectric Elastomer Actuators

Danick Briand, Herbert Shea, Rubaiyet Iftekharul Haque, Ronan Julien Hinchet, Alexis Pierre Henri Marette, Xiaobin Ji

A high‐voltage flip‐flop combining two self‐powered soft sensors with a flexible high‐voltage thin film transistor (HVTFT) is reported, and is used to electrically latch dielectric elastomer actuators (DEAs) in zero and high‐strain states. Two touch‐actuat ...

2019

Network-Compute Co-Design for Distributed In-Memory Computing

Alexandros Daglis

The booming popularity of online services is rapidly raising the demands for modern datacenters. In order to cope with data deluge, growing user bases, and tight quality of service constraints, service providers deploy massive datacenters with tens to hund ...

EPFL2018

Integrated ESOP Refactoring for Industrial Designs

Giovanni De Micheli, Mathias Soeken, Luca Gaetano Amarù, Winston Jason Haaswijk

We present a multi-level logic refactoring algorithm based on exclusive sum-of-product (ESOP) expressions. ESOP expressions are two-level logic representation forms, similar to sum of -product (SOP) expressions. However, ESOPs use EXOR instead of OR operat ...

IEEE2018

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

Charge Neutralization and Direct Thrust Measurements from Bipolar Pairs of Ionic- Electrospray Thrusters

Herbert Shea, Daniel George Courtney

lectrospray (ES) thrusters are unique in their ability to emit both positive and negative beams, each contributing similarly to thrust. Spacecraft charging could be prevented without a dedicated neutralizer if currents of simultaneously emitted opposing po ...

2017

Spin waves with large decay length and few 100 nm wavelengths in thin yttrium iron garnet grown at the wafer scale

Dirk Grundler

Using conventional coplanar waveguides (CPWs), we excited spin waves with a wavelength λ down to 310 nm in a 200 nm thin yttrium iron garnet film grown by liquid phase epitaxy. Spin-wave transmission was detected between CPWs that we separated by up to 2 m ...

American Institute of Physics2017