Concept

Indium antimonide

Related publications (23)

Transport and Interfacial Injection of d-Band Hot Holes Control Plasmonic Chemistry

Giulia Tagliabue, Fateme Kiani Shahvandi, Alan Richard Bowman, Milad Sabzehparvar, Omer Can Karaman

Harnessing nonequilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field with the potential to control photochemical reactions, particularly for solar fuel generation. However, a comprehensive understanding of the int ...

AMER CHEMICAL SOC2023

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known ...

ROYAL SOC CHEMISTRY2023

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Gabriel Aeppli

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

WILEY2023

Electronic Structure of InAs and InSb Surfaces: Density Functional Theory and Angle-Resolved Photoemission Spectroscopy

Gabriel Aeppli

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces is studied ...

WILEY2022

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Wonjong Kim, Lucas Güniat, Valerio Piazza

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

American Chemical Society (ACS)2021

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

Wiley2021

Differential Response of the Photoluminescence and Photocurrent of Polycrystalline CH(3)NH(3)PbI(3 )and CH3NH3PbBr3 to the Exposure to Oxygen and Nitrogen

László Forró, Andrzej Sienkiewicz, Endre Horvath, Márton Kollár, Anastasiia Glushkova, Konstantins Mantulnikovs

Because of their excellent photoelectric properties, organic-inorganic metal halide perovskites (MHPs), such as methylammonium lead triiodide, CH3NH3PbI3 (MAPbI(3)), and methylammonium lead tribromide, CH3NH3PbBr3 (MAPbBr(3)), are of great interest for the ...

2019

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

Spin waves with large decay length and few 100 nm wavelengths in thin yttrium iron garnet grown at the wafer scale

Dirk Grundler

Using conventional coplanar waveguides (CPWs), we excited spin waves with a wavelength λ down to 310 nm in a 200 nm thin yttrium iron garnet film grown by liquid phase epitaxy. Spin-wave transmission was detected between CPWs that we separated by up to 2 m ...

American Institute of Physics2017

Advancing Materials and Methods for Photoelectrochemical Energy Conversion

Kevin Sivula

Strategies to convert energy from the sun into chemical fuels and feedstocks for a carbon-neutral economy are under rapid development. A photoelectrochemical route uses a direct semiconductor liquid junction that offers simplicity but places challenging co ...

Swiss Chemical Soc2017

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Anna Fontcuberta i Morral, Esther Alarcon Llado, Francesca Amaduzzi

importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using ...

Institute of Physics2016

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Anna Fontcuberta i Morral, Federico Matteini, Alberto Casadei, Fauzia Jabeen

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time resolved terahertz photoconductivity for assessing n- and p-type doping efficienc ...

American Chemical Society2016

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Heidi Andrea Potts, Sonia Conesa Boj

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Helmuth Berger

Topological insulators (TIs) are interesting quantum matters that have a narrow bandgap for bulk and a Dirac-cone-like conducting surface state (SS). The recent discovered second Dirac surface state (SS) and bulk bands (BBs) located similar to 1.5 eV above ...

Nature Publishing Group2015

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Anna Fontcuberta i Morral, Sonia Conesa Boj

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...

American Chemical Society2014

Investigation of indium-rich InGaN alloys and kinetic growth regime of GaN

Nils Asmus Kristian Kaufmann

Nowadays, light emitting diodes (LEDs) and laser diodes (LDs) are part of our daily life. More and more devices incorporate InGaN-based optoelectronic devices. In fact, since the first demonstration of a candela-class InGaN-based LED in the beginning of th ...

EPFL2013

Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy

Lorenzo Lugani

Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the framework of a theoretical model. An unusual, non-monotonous diameter dependence of the InSb nanowire gr ...

2012

Thermoelectric Phenomena in Bi1-xSbx Nanowires in Semimetal and Gapless Region

Jean-Philippe Ansermet

The paper report results of magneto-thermoelectric properties the single crystal Bi1-xSbx nanowires in glass cover with different diameters prepared by Ulitovsky-Taylor method. We study the effect of nanowire dimensionality in the Bi1-xSbx, nanowires in se ...

Amer Scientific Publishers2012

On the origin of exciton formation in dye doped Alq(3) OLEDs

Libero Zuppiroli

Electrically Detected Magnetic Resonance (EDMR) was used to investigate the influence of dye doping on spin-dependent exciton formation in aluminum (III) 8-hydroxyquinoline (Alq(3)) based Organic Light Emitting Diodes (OLEDs) with different device structur ...

Springer2012

Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

Klaus Kern

The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnos ...

2010