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Related publications (29)

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High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

A single-chip integrated transceiver for high field NMR magnetometry

Giovanni Boero, Marco Grisi, Gaurasundar Marc Conley

We present the design and performance of a broad-band single-chip integrated transceiver specifically conceived for nuclear magnetic resonance magnetometry. The single-chip transceiver is realized using a standard silicon complementary metal-oxide-semicond ...

AMER INST PHYSICS2019

Gem5-X: A Gem5-Based System Level Simulation Framework to Optimize Many-Core Platforms

David Atienza Alonso, Marina Zapater Sancho, William Andrew Simon, Yasir Mahmood Qureshi

The rapid expansion of online-based services requires novel energy and performance efficient architectures to meet power and latency constraints. Fast architectural exploration has become a key enabler in the proposal of architectural innovation. In this p ...

IEEE2019

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

Low-Cost Readout Electronics for Piezoresistive MEMS-Based Transducers

Marco Mattavelli, Diego Ruben Barrettino

The designs fabrication and testing of low-cost readout electronics for piezoresistive MEMS-based transducers are presented in this paper. The proposed circuit architecture has a low input referred noise power spectral density of 60nV/root Hz a latency of ...

IEEE2019

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Yusuf Leblebici, Thomas La Grange, Tugba Demirci, Elmira Shahrabi

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

Exciton dynamics in DNA oligomers studied by broadband deep-UV transient absorption spectroscopy

Majed Chergui, Malte Oppermann, Benjamin Bauer

We report broadband transient absorption measurements of adenine strands in the deep-UV (250-370 nm). By varying the strand length we resolve the interplay between inter-base stacking and exciton formation and dynamics in DNA oligomers. ...

E D P SCIENCES2019

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Mihai Adrian Ionescu, Francesco Bellando, Hoël Maxime Guérin, Fabien Patrick Wildhaber, Erick Antonio Garcia Cordero, Junrui Zhang, Johan Frédéric Longo

Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration of certain biomarkers in sweat can be directly correlat ...

2018