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Publications associées (32)

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Stable MXene Dough with Ultrahigh Solid Fraction and Excellent Redispersibility toward Efficient Solution Processing and Industrialization

Frank Nüesch, Jakob Heier, Shungui Deng

Two-dimensional (2D) transition metal carbides, and/or nitrides, so-called MXenes, have triggered intensive research interests in applications ranging from electrochemical energy storage to electronics devices. Producing these functional devices by printin ...

WILEY2023

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Elison de Nazareth Matioli, Hongkeng Zhu

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

2023

Additive and digital manufacturing of transient sensors and bioelectronics

Nicolas Francis Fumeaux

Transient electronics have emerged as a promising class of devices, capable of breaking down without harmful side effects to their environment. They have tremendous potential as bioresorbable electronics for temporary applications in the human body, and as ...

EPFL2023

Modeling and analysis of miniaturized magnetorheological valve for fluidic actuation

Sofia Lydia Ntella

Fluidic actuation enables movement in a wide range of mechanical systems, from simple laboratory devices to more complex industrial machinery. Fluids are used to generate motion of mechanical pieces. The term "fluids" encompasses two types of technologies: ...

EPFL2023

Silicon spin qubits from laboratory to industry

Edoardo Charbon

Quantum computation (QC) is one of the most challenging quantum technologies that promise to revolutionize data computation in the long-term by outperforming the classical supercomputers in specific applications. Errors will hamper this quantum revolution ...

IOP Publishing Ltd2023

Frontiers in the Application of RF Vacuum Electronics

Timothy Goodman

The application of radio frequency (RF) vacuum electronics for the betterment of the human condition began soon after the invention of the first vacuum tubes in the 1920s and has not stopped since. Today, microwave vacuum devices are powering important app ...

2023

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Andras Kis, Andreas Schueler, Elison de Nazareth Matioli, Anna Krammer, Mohammad Samizadeh Nikooytabalvandani, Philip Johannes Walter Moll, Reza Soleiman Zadeh Ardebili, Guilherme Migliato Marega

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

Nature Research2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Martin George Friedl, Lucas Güniat, Didem Dede, Nicholas Paul Morgan, Valerio Piazza, Akshay Balgarkashi, Elif Nur Dayi

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022