Publication

Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I

Publications associées (31)

Benzodithiophene‐Based Spacers for Layered and Quasi‐Layered Lead Halide Perovskite Solar Cells

Mounir Driss Mensi, Jun Ho Yum, Kevin Sivula, Nestor Guijarro Carratala, Luc Emile Monnier, Liang Yao, Barbara Alexandra Primera Darwich, Han-Hee Cho

Incorporating extended pi-conjugated organic cations in layered lead halide perovskites is a recent trend promising to merge the fields of organic semiconductors and lead halide perovskites. Herein, we integrate benzodithiophene (BDT) into Ruddlesden–Poppe ...

2021

Weakness of Correlation Effect Manifestation in BaNi2As2: An ARPES and LDA plus DMFT Study

Daniil Yevtushynsky, Timur Kim

The electronic spectral function of BaNi2As2 is investigated using both angle-resolved photoemission spectroscopy (ARPES) and a combined computational scheme of local density approximation and dynamical mean-field theory (LDA + DMFT). In contrast to the we ...

AMER CHEMICAL SOC2021

Proximity-Induced Novel Ferromagnetism Accompanied with Resolute Metallicity in NdNiO3 Heterostructure

Joël Mesot, Zoran Ristic, Marco Caputo, Anna Zakharova, Zheng Wang

Employing X-ray magnetic circular dichroism (XMCD), angle-resolved photoemission spectroscopy (ARPES), and momentum-resolved density fluctuation (MRDF) theory, the magnetic and electronic properties of ultrathin NdNiO3 (NNO) film in proximity to ferromagne ...

2021

From hidden order to antiferromagnetism: Electronic structure changes in Fe-doped URu2Si2

Emmanouil Frantzeskakis, Kevin Huang, Ji Dai

In matter, any spontaneous symmetry breaking induces a phase transition characterized by an order parameter, such as the magnetization vector in ferromagnets, or a macroscopic many electron wave function in superconductors. Phase transitions with unknown o ...

National Academy of Sciences2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Electronic Structure of Water from Koopmans-Compliant Functionals

Alfredo Pasquarello, Wei Chen, Nicola Marzari, Ngoc Linh Nguyen, Nicola Colonna

Obtaining a precise theoretical description of the spectral properties of liquid water poses challenges for both molecular dynamics (MD) and electronic structure methods. The lower computational cost of the Koopmans-compliant functionals with respect to Gr ...

2021

Hidden bulk and surface effects in the spin polarization of the nodal-line semimetal ZrSiTe

Helmuth Berger, Marco Grioni, Arnaud Magrez, Oleg Yazyev, Alberto Crepaldi, Mauro Fanciulli, Gianmarco Gatti, Daniel Gosalbez Martinez, Silvan Dino Marcos Roth

Local inversion symmetry breaking in centrosymmetric materials can lead to large spin polarization of the electronic band structure in separate sectors of the unit cell. Here, the authors reveal such hidden spin polarisation in ZrSiTe using spin and angle ...

NATURE RESEARCH2021

Novel Interfacial Characterization and Surface Engineering in Semiconductor Electrodes for Optimized Solar Fuel Production

Yongpeng Liu

Harvesting sunlight, the ultimate renewable power source, in a cost-effective way has been long recognized as a necessary route to meet the global energy challenges. Solar energy can be transformed into electricity by means of photovoltaic devices to suppl ...

EPFL2021

Time- and Angle-Resolved Photoelectron Spectroscopy of Solar Materials

Serhii Polishchuk

Natural foundations defining the manner in which a solid material interacts with optical radiation are primarily encoded in the material's momentum-dependent band structure and the microscopic details of the electron-lattice interactions. An access to this ...

EPFL2021

In-line electronic and structural characterization of reactively sputtered Cu-Co-Mn black spinel oxides

Andreas Schueler, Anna Krammer, Maxime Lagier

Cu-Co-Mn spinel oxide thin films are deposited by reactive magnetron sputtering. The x-ray diffraction (XRD) spectrum suggests a nanocrystalline spinel film when sputtered at approximate to 465 degrees C. In-line scanning tunneling microscopy confirms nano ...

A V S AMER INST PHYSICS2021

Insight into the electronic structure of semiconducting epsilon-GaSe and epsilon-InSe

Helmuth Berger, Marco Grioni, Daniela Pacilè, Alberto Crepaldi

Metal monochalcogenides (MX) have recently been rediscovered as two-dimensional materials with electronic properties highly dependent on the number of layers. Although some intriguing properties appear in the few-layer regime, the carrier mobility of MX co ...

AMER PHYSICAL SOC2020