Publications associées à Near/Sub-Threshold Circuits and Approximate Computing: The Perfect Combination for Ultra-Low-Power Systems

Publications associées (32)

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

Graph generative deep learning models with an application to circuit topologies

Igor Krawczuk

Modern integrated circuits are tiny yet incredibly complex technological artifacts, composed of millions and billions of individual structures working in unison. Managing their complexity and facilitating their design drove part of the co-evolution of mode ...

EPFL2024

Contemporary Logic Synthesis: with an Application to AQFP Circuit Optimization

Siang-Yun Lee

Electronic devices play an irreplaceable role in our lives. With the tightening time to market, exploding demand for computing power, and continuous desire for smaller, faster, less energy-consuming, and lower-cost chips, computer-aided design for electron ...

EPFL2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Zihan Li, Terence Albert Emile Blésin, Chengli Wang, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao, Alisa Davydova

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Technology-Aware Logic Synthesis for Superconducting Electronics

Giovanni De Micheli, Alessandro Tempia Calvino, Siang-Yun Lee, Dewmini Sudara Marakkalage, Mingfei Yu, Rassul Bairamkulov

Superconducting electronics provide us with cryogenic digital circuits that can rival established technologies in performance and energy consumption. Today, the lack of tools for the design of large-scale integrated superconducting circuits is a major obst ...

2024

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Kapil Bhardwaj, Sandro Carrara, Junrui Chen

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz, Uiho Choi

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

Integrated silicon photonic MEMS

Niels Quack, Alain Yuji Takabayashi, Hamed Sattari

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and ...

SPRINGERNATURE2023

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Alexandre Schmid, Mehdi Saberi

This paper presents a new power-efficient and high-speed voltage level shifter. In the proposed structure, the existing contentions at the internal nodes are reduced using auxiliary transistors and feedback networks, leading to a significant reduction in t ...

IEEE2023

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Jonathan Emanuel Thomet

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

Integrated Electronics for Deep Implants to Remotely Monitor Hemodynamics

Mustafa Besirli

The integration of technology in the medical field has greatly improved accuracy in diagnoses, thus leading to more effective treatments. Wearable and implantable medical devices offer great potential for remote patient monitoring, particularly for heart f ...

EPFL2023

Performance and degradation in silicon PV systems under outdoor conditions in relation to reliability aspects of silicon PV modules - Summary of results of COST Action PEARL PV

Andrew Wayne Fairbrother, David Moser

This paper presents the main results of COST Action PEARL PV, aiming at finding connections between the observed performance of monitored PV systems and degradation causes and failure modes according to literature with a focus on the most dominant technolo ...

IEEE2023

Investigation and Mitigation of Moisture- and Potential-Induced Degradation Mechanisms of Silicon Heterojunction Solar Cells and Modules

Olatz Arriaga Arruti

Photovoltaic (PV) technology is one of the most promising renewable energy sources. The PV market is dominated by crystalline silicon (c-Si) based technologies, thus ensuring their long-term performance is of paramount importance for manufacturers, investo ...

EPFL2023

Cascaded all-optical quantization employing step-size MMI and shape-optimized power splitter

Jijun He

As a key unit of future high-throughput communications, optical analog to digital converter (OADC) with all-optical quantizer element that simultaneously possesses high resolution, large bandwidth and compact size is highly promising. A pending issue of co ...

ELSEVIER SCI LTD2023

A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology

Edoardo Charbon, Francesco Piro

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

Ieee-Inst Electrical Electronics Engineers Inc2023