Publication

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Publications associées (32)

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Lucas Güniat, Nicolas Tappy, Martin George Friedl, Wonjong Kim, Santhanu Panikar Ramanandan, Akshay Balgarkashi, Didem Dede

Embedding quantum dots in nanowires (NWs) constitutes one promising building block for quantum photonic technologies. Earlier attempts to grow InAs quantum dots on GaAs nanowires were based on the Stranski-Krastanov growth mechanism. Here, we propose a nov ...

2020

Density control of GaN quantum dots on AlN single crystal

Nicolas Grandjean, Sebastian Pascal Tamariz Kaufmann, Gordon Jens Callsen

Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In this work, we derive the phase diagram for GaN QD formation on AlN by NH3-m ...

2019

Semiconductor Nanowires: To Grow or Not to Grow?

Anna Fontcuberta i Morral

Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categorie ...

2019

GaN Quantum Dots for Room Temperature Excitonic Physics

Sebastian Pascal Tamariz Kaufmann

Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such they exhibit remarkable properties, of which the most important is perhaps the absence of a continuum of states. The allowed energetic levels are discrete, si ...

EPFL2019

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides

Oleg Yazyev, Artem Pulkin

Chalcogen vacancies are generally considered to be the most common point defects in transition metal dichalcogenide (TMD) semiconductors because of their low formation energy in vacuum and their frequent observation in transmission electron microscopy stud ...

Springer2019

Template-Assisted Scalable Nanowire Networks

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Lucas Güniat, Martin George Friedl, Heidi Andrea Potts, Mahdi Zamani, Wonjong Kim, Sara Marti Sanchez, Vladimir Dubrovskii

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of ...

American Chemical Society (ACS)2018

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Ian Michael Rousseau

Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...

EPFL2018

The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

Gözde Tütüncüoglu

This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

EPFL2017