Publication

Resistive Switching Element and Use Thereof

Publications associées (31)

Exploration of Negative Capacitance Devices and Technologies

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

Emanuele Andrea Casu

In the past half-century, the semiconductor industry has relied on the scaling of complementary metal-oxide-semiconductor (CMOS) transistor dimensions and on material and geometrical innovations to increase the computational density. Approaching the end of ...

EPFL2018

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Giovanni Vincenzo Resta

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

Analysis of reactivity worths of burnt PWR fuel samples measured in LWR-PROTEUS Phase II using a CASMO-5 reflected-assembly model

Hakim Ferroukhi, Daniel Jerôme Siefman, Mathieu Hursin

The reactivity loss of PWR fuel with burnup has been investigated experimentally by measuring the reactivity worths of highly-burnt fuel samples in a PWR test lattice in the framework of the LWR-PROTEUS Phase II program. Seven UO2 samples cut from fuel rod ...

2017

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds

Lin Yang

In this thesis I study the synthesis and basic physical properties characterization on 3

d

, 4

d

and 5

d

transition metal compounds. Great success has been obtained in 3

d

transition metal compounds, in which the electric states are well localized due t ...

EPFL2017

Unraveling Thermodynamics, Stability, and Oxygen Evolution Activity of Strontium Ruthenium Perovskite Oxide

Nicola Marzari, Ivano Eligio Castelli, Xi Cheng

Extensive investigations in understanding the functional mechanisms of metal oxides behind oxygen evolution have been carried out since an electrolyzer has demonstrated promising possibilities as a device to produce hydrogen for electrochemical energy conv ...

Amer Chemical Soc2017

Spectroscopic Studies of the Electronic Structure in Layered Cuprates and Ruthenates

Claudia Giuseppina Fatuzzo

In materials where electrons interact strongly, a number of exotic and exciting phenomena arise. The mechanisms at the base of many of these phenomena remain debated, as strongly correlated electron physics represents one of the biggest challenges for mode ...

EPFL2017

2D transition metal dichalcogenides

Andras Kis, Oleg Yazyev, Diego José Pasquier, Sajedeh Manzeli, Dmitry Ovchinnikov

Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the t ...

Nature Publishing Group2017

Influence of structural and electrostatic disorder on transport properties of monolayers of two-dimensional semiconductors

Dmitry Ovchinnikov

Two-dimensional (2D) materials are under intensive investigation recently due to variety of electronic properties, ranging from insulators (h-BN) to semi-metals (graphene), semiconductors (MoS2, WSe2) with wide variability of band-gap and correlated phases ...

EPFL2017

Static negative capacitance of a ferroelectric nano-domain nucleus

Nava Setter, Pavel Mokry, Tomas Sluka

Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...

Amer Inst Physics2017

Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

Wolfgang Amadeus Vitale

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

EPFL2016