Publication

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Publications associées (32)

GaN vertical power devices on silicon substrates

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

Nicolas Grandjean, Raphaël Butté, Sebastian Pascal Tamariz Kaufmann

c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

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How free exciton-exciton annihilation lets bound exciton emission dominate the photoluminescence of 2D-perovskites under high-fluence pulsed excitation at cryogenic temperatures

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Photoluminescence (PL) spectra of atomically thin 2D lead iodide perovskite films are shown to depend on excited-state density, especially at cryogenic temperatures. At high excited-state densities and low temperatures, free exciton (FE) emission is so sup ...

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Luminescent lanthanide nanocomposites in thermometry: Chemistry of dopant ions and host matrices

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Recently, there has been observed huge progress in the advancement of remote optical nanothermometry, as it plays a vital role in remote, noninvasive, and remote temperature sensing, which is especially important for various bio-applications, e.g., in ther ...

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Enhanced Room-Temperature Photoluminescence Quantum Yield in Morphology Controlled J-Aggregates

Frank Nüesch, Surendra Babu Anantharaman, Jakob Heier

Supramolecular assemblies from organic dyes forming J-aggregates are known to exhibit narrowband photoluminescence with full-width at half maximum of approximate to 9 nm (260 cm(-1)). Applications of these high color purity emitters, however, are hampered ...

2021

Diamond on GaN integration for power semiconductor devices with efficient thermal management

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The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

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Nanopillars Enabling III-V Integration on Si (100) and (111)

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The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

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Photoluminescence emission induced by localized states in halide-passivated colloidal two-dimensional WS2 nanoflakes

Michele Saba, Raffaella Buonsanti, Anna Loiudice, Jan Vávra

Engineering physicochemical properties of two-dimensional transition metal dichalcogenide (2D-TMD) materials by surface manipulation is essential to enabling their practical and large-scale application. This is especially challenging for colloidal 2D-TMDs ...

Royal Society of Chemistry2021

Laser soliton microcombs heterogeneously integrated on silicon

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Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

Synthesis, structural and magnetic characterization of thin films of the chiral magnets CoZnMn and FeGe

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Skyrmions are topologically protected nanometer-sized magnetic vortices that have sparked interest for future spintronics applications aiming at high-density, high-speed and low-power consuming magnetic memory devices. One type of skyrmions appears in non- ...

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Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

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Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

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Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...

EPFL2020