Publications associées à Hybrid Si3N4-LiNbO3 integrated platform for electro-optic conversion

Printed degradable piezoelectric microsystems: From ink formulation to device fabrication and characterization

As the world moves further and further into the semiconductor era, the amount of waste generated from electronics ("e-waste") is increasing rapidly and unsustainably. Of particular note, alternatives to lead-based piezoelectric materials must be establishe ...

EPFL2023

Dynamic control of high-voltage actuator arrays by light-pattern projection on photoconductive switches

Herbert Shea, Amir Firouzeh, Vesna Bacheva, Edouard Franck Vincent Gustave Leroy, Aiste Balciunaite

The ability to control high-voltage actuator arrays relies, to date, on expensive microelectronic processes or on individual wiring of each actuator to a single off-chip high-voltage switch. Here we present an alternative approach that uses on-chip photoco ...

SPRINGERNATURE2023

A new versatile hybrid MEMS technology for high sensitivity, fluid proof sensing applications

Matthias Neuenschwander

The field of micro electromechanical systems (MEMS) evolved from the microelectronic industry and the technologies developed to fabricate integrated circuits. As a result, MEMS are commonly fabricated on silicon wafers. The development of MEMS has been dri ...

EPFL2022

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

EPFL2022

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Luca Capua, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Fabrication of zipping electrostatic actuators incorporating inkjet-printed layers

Samuel Rosset, Herbert Shea, Giulio Grasso

Zipping electrostatic actuators operate by bending flexible electrodes using electrostatic forces. This principle allows the use of a wide range of dielectric and conductive materials. Additive Manufacturing (AM) techniques can be used to fabricate these a ...

SPIE-INT SOC OPTICAL ENGINEERING2021

High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

Rui Ning Wang, Tobias Kippenberg, Junqiu Liu, Arslan Sajid Raja, Nils Johan Engelsen, Guanhao Huang, Jijun He, Tianyi Liu

Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with est ...

Nature Research2021

Frequency-scalable fabrication process flow for lithium niobate based Lamb wave resonators

Luis Guillermo Villanueva Torrijo, Muhammad Faizan

In this paper, we demonstrate the fabrication and characterization of lithium niobate (LN) based Lamb wave mode (S0 and SH0) resonators that address the stringent requirements of RF filtering for modern communication systems. The devices consist of a 400 n ...

IOP PUBLISHING LTD2020

Wafer-Scale Fabrication of Nanopore Devices for Single-Molecule DNA Biosensing using MoS2

Andras Kis, Aleksandra Radenovic, Michael Graf, Martina Lihter, Jochem Deen, Michal Daniel Macha, Mukeshchand Thakur, Andrey Chernev, Mukesh Kumar Tripathi

Atomically thin (2D) nanoporous membranes are an excellent platform for a broad scope of academic research. Their thickness and intrinsic ion selectivity (demonstrated for example in molybdenum disulfide-MoS2) make them particularly attractive for single-m ...

2020

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Kaitlin Marie Howell

Micro- and nanoelectromechanical systems (MEMS/NEMS) have long shown their potential to disrupt the established technologies. Over the past 15 years, MEMS have become fundamental components in filters, accelerometers, gyroscopes and gas sensors. MEMS are n ...

EPFL2019

AlN and AlScN contour mode resonators for MEMS-based RF front ends

Andrea Lozzi

Miniaturization is a simple yet very powerful concept. Applied to devices, it opens to plethora of new applications. Microelectromechanical systems (MEMS) are the result of scaling down the dimensions of devices to the micron range or the nano range (NEMS) ...

EPFL2019

Advanced Diamond Microfabrication for Microoptics and Photonics

Marcell Kristof Kiss

Diamond is an exceptional material - hard, stiff, transparent, which makes it ideal for the fabrication of optical and mechanical systems that take advantage of these properties. Diamond is not only "better", but it offers the possibility of integrating br ...

EPFL2019

Monolithic Fabrication of Silicon Nanowires Bridging Thick Silicon Structures

Yusuf Leblebici, Oliver Peric, Davide Sacchetto, Zuhal Tasdemir

A monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Top-Down Technique for Scaling toNnano in Silicon MEMS

Yusuf Leblebici, Zuhal Tasdemir, Yasin Kilinc, Mustafa Yilmaz

Nanoscale building blocks impart added functionalities to microelectromechanical systems (MEMS). The integration of silicon nanowires with MEMS-based sensors leading to miniaturization with improved sensitivity and higher noise immunity is one example high ...

American Vacuum Society2017

Superplastic behavior of silica nanowires obtained by direct patterning of silsesquioxane-based precursors

Yusuf Leblebici, Mustafa Yilmaz, Mohammad Nasr Esfahani

Silica nanowires spanning 10 μm-deep trenches are fabricated from different types of silsesquioxane-based precursors by direct e-beam patterning on silicon followed by release through deep reactive ion etching. Nanowire aspect ratios as large as 150 are ac ...

Institute of Physics2017

Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits

Hassan Ghasemzadeh Mohammadi

Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon ...

EPFL2016

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Yusuf Leblebici, Zuhal Tasdemir

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extrem ...

Institute of Physics2016

Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

Jean-Michel Sallese, Alessandro Mapelli

In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic ...

Institute of Physics2016

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

In this work, we propose and investigate the high performance and low power design space of non-hysteretic negative capacitance MOSFETs for the 14nm node based on the calibrated simulations using an experimental gate stack with PZT ferroelectric to obtain ...

2016

Post-cmos processing and 3d integration based on dry-film lithography

Yusuf Leblebici, Yüksel Temiz, Carlotta Guiducci

A method for performing a post processing pattern on a diced chip having a foot-print, comprises the steps of providing a support wafer; applying a first dry film photoresist to the support wafer; positioning a mask corresponding to the footprint of the di ...

2015