Publication

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

Publications associées (31)

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

EPFL2022

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Mihai Adrian Ionescu, Shokoofeh Sheibani

The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

2022

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Ultra low quantum decoherence nano-optomechanical systems

Mohammadjafar Bereyhi

Thermal motion of a room-temperature mechanical resonator typically dominates the quantum backaction of its position measurement. This is a longstanding barrier for exploring cavity optomechanics at room temperature. In order to enter the quantum regime of ...

EPFL2022

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal phase transition in Vanadium dioxide

Fatemeh Qaderi Rahaqi

Millimeter-wave (mm-wave) and terahertz (THz) detection has opened a significant research direction in imaging, sensing, spectroscopy, and ultrafast wireless communication. The sensitivity of the phase transition to electromagnetic waves in Vanadium dioxid ...

EPFL2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Christian Enz

This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Pirouz Sohi, Catherine Erine, Mohammad Samizadeh Nikooytabalvandani, Luca Nela

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021