Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

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Zinc phosphide ( Zn3P2) is a promising earth-abundant material for solar cell applications but calls for the further understanding of its optoelectronic properties. In this work, we perform contact-free and noninvasive optical-pump terahertz probe (OPTP) s ...

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This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Continuous development of thin film deposition technologies is essential for the fabrication of films that meet the specific requirements of their target applications and working conditions. Therefore, it is necessary to increase the number of accessible a ...

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

A quantitative analysis of stress in indium tin oxide (ITO) films with varying thicknesses was conducted using high-precision stylus profilometry. The experimental results revealed a transition of the stress type from tensile to compressive as the ITO film ...

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

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Investigating the Effect of Crystal Morphology on Optoelectronic Properties of Zinc Phosphide Thin Films via Optical-pump Terahertz Probe Spectroscopy

Synthesis of metal oxide-overcoated carbon materials by liquid phase ALD and their applications in catalysis

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Plasma-Assisted Hybrid Vapour Deposition Technology for Thin Film Fabrication

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Quantitative study of the thickness-dependent stress in indium tin oxide thin films

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures