Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

A widely used component of high-efficiency perovskite solar cells (PSCs) is the molecular hole-transport material (HTM) spiro-OMeTAD. This organic solid needs to be p-doped to acquire sufficient hole conductivity. However, the conventional doping method us ...

In this study, we place a strong emphasis on understanding the ultrafast dynamics of carrier recombination pathways in p-type ZnO, especially in the midgap region. Synthesizing and controlling the properties of p-type ZnO remains a pivotal yet challenging ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Excitons play an essential role in the optical response of two-dimensional materials. These are bound states showing up in the band gaps of many-body systems and are conceived as quasiparticles formed by an electron and a hole. By performing real-time simu ...

This work addresses the need for precise control of thin film sputtering processes to enable thin film material tailoring on the example of zinc tin nitride (ZTN) thin films deposited via microwave plasma-assisted high power reactive magnetron sputtering ( ...

In semiconductors, exciton or charge carrier diffusivity is typically described as an inherent material property. Here, we show that the transport of excitons among CsPbBr3 perovskite nanocrystals (NCs) depends markedly on how recently those NCs were occup ...

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

Significant advancements have been made in the development of high-performance cadmium telluride (CdTe)-based thin film solar cells. However, studies examining the transient excited-state charge dynamics, which determine the final steady-state device perfo ...

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

Solar energy is the most abundant energy source, harnessing solar energy holds the solution to the challenge of increasing global energy demand and reducing our dependence on fossil fuels. Photovoltaics which directly convert solar energy into electricity ...

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

Nonradiative recombination in Cu(In,Ga)Se2 (CIGS) solar cells has long been attributed to the antisite defects MCu (M = In, Ga), but the underlying mechanism is still elusive. Using rigorous first-principles calculations, we demonstrate that the antisites ...

The electron self-interaction is a long-standing problem in density functional theory and is particularly critical in the description of polarons. Polarons are quasiparticles involving charge localization coupled with self-induced lattice distortions. Sinc ...

The ionic defects of hetero-junction interfaces always attract and trap carriers via surface electrostatic forces, which are crucial for the efficiency and intrinsic stability of perovskite solar cells (PSCs). Herein, functionalized carbon nanotubes (CNTs) ...

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Chattez avec Graph Search

Photo-doping of spiro-OMeTAD for highly stable and efficient perovskite solar cells

Ultrafast carrier dynamics and insights in defect mechanism of p-type colloidal ZnO QDs

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Exciton migration in two-dimensional materials

Nanostructure and Optical Property Tailoring of Zinc Tin Nitride Thin Films through Phenomenological Decoupling: A Pathway to Enhanced Control

Persistent enhancement of exciton diffusivity in CsPbBr3 nanocrystal solids

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Semiconductor-based device architectures in multimaterial fibers

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Charge Extraction and Recombination Dynamics of CdSe/CdTe Solar Cells Studied with Transient Photovoltage/Photocurrent Techniques

Murunskite - a new class of functional material

GeSn as next-generation material for short-wave infrared single-photon detection

Photoelectrochemical Cell Engineering for Solar Energy Conversion

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Chemical Trend of Nonradiative Recombination in Cu(In,Ga)Se2 Alloys

Self-Interaction and Polarons in Density Functional Theory

Interface connection of functionalized carbon nanotubes for efficient and stable perovskite solar cells