Publication

Integrated Single Photon Avalanche Detectors

Publications associées (30)

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The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...

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Time-of-flight device and 3d optical detector

Christian Enz, Assim Boukhayma, Antonino Caizzone

A Time-of-flight optical device and a 3D optical detector comprising a CMOS integrated circuit with an array of photosensitive pixels that are, at least in part, interconnected to form macro-pixels (180). Each macro-pixel (180) groups a plurality of indivi ...

2020

A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic Range

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This letter introduces a 5-transistors (5T) implementation of CMOS Image Sensors (CIS) pixels enabling the combination of deep sub-electronnoise performance with wide dynamic range (DR). The 5T pixel presents a new technique to reduce the sense node capaci ...

Institute of Electrical and Electronics Engineers2020

At the end of scaling: 2D materials for computing and sensing applications

Nicolò Oliva

In the past half-century, the digital revolution completely changed the world we live in and the ways we experience it. Over this period, the underlying force supporting the continuous technological development has been the geometrical scaling of transisto ...

EPFL2020

Time Domain NIRS Optode based on Null/Small Source-Detector Distance for Wearable Applications

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We present the designs of novel optode based probes integrating light detection and light-pulsing electronics in a single CMOS chip with functional blocks such as a fast pulse-laser driver and synchronized single-photon detection circuit, while exploiting ...

IEEE2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

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The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

ReRAM From Material Study to CMOS Co-integration

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The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

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Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors

Christian Enz, Farzan Jazaeri, Assim Boukhayma, Raffaele Capoccia

In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...

2019

Single-photon avalanche diode imagers in biophotonics: review and outlook

Claudio Bruschini, Edoardo Charbon, Samuel Burri, Ivan Michel Antolovic, Harald Arjan Robert Homulle

Single-photon avalanche diode (SPAD) arrays are solid-state detectors that offer imaging capabilities at the level of individual photons, with unparalleled photon counting and time-resolved performance. This fascinating technology has progressed at a very ...

2019

Pixel sensor cell for cmos image sensors with enhanced conversion gain at high dynamic range capability

Assim Boukhayma

The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: - a photodiode (11) for generating photoelectrons; - a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured t ...

2019