Publication

Metallic Nanowires by Full Wafer Stencil Lithography

Publications associées (29)

Growth mechanisms of III-V semiconductor nanostructures on silicon

The aim of this thesis is to understand the dynamics of the growth of catalyst-free III-V semiconductor nanostructures on silicon substrates, focusing the attention mainly on the early stages of growths. A detailed understanding of this first phase of the ...

EPFL2015

Modulation Doping of GaAs/AlGaAs Core-Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Anna Fontcuberta i Morral, Sonia Conesa Boj, Alberto Casadei, Federico Matteini, Fauzia Jabeen, Francesca Amaduzzi

Reliable doping is required to realize many devices based on semiconductor nanowires. Group IIIV nanowires show great promise as elements of high-speed optoelectronic devices, but for such applications it is important that the electron mobility is not comp ...

American Chemical Society2015

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Anna Fontcuberta i Morral, Sonia Conesa Boj

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...

American Chemical Society2014

Pressure Tuning of the Optical Properties of GaAs Nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli

The tuning of the optical and electronic properties of semiconductor nanowires can be achieved by crystal phase engineering. Zinc-blende and diamond semiconductors exhibit pressure-induced structural transitions as well as a strong pressure dependence of t ...

American Chemical Society2012

Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Core-Shell GaAs Nanowire p-n Junctions from Growth to Photovoltaic and Optoelectronic Applications

Carlo Colombo

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 15 years, they have been intensively studied for the prospectives that their unique quasi-one dimensional shape off ...

EPFL2012

Compliant membranes improve resolution in full-wafer micro/nanostencil lithography

Jürgen Brugger, Oscar Vazquez Mena, Katrin Sidler Arnet, Andreea Veronica Savu, Luis Guillermo Villanueva Torrijo

This work reports on a considerable resolution improvement of micro/nanostencil lithography when applied on full-wafer scale by using compliant membranes to reduce gap-induced pattern blurring. Silicon nitride (SiN) membranes are mechanically decoupled fro ...

2012

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

Anna Fontcuberta i Morral, Martin Heiss, Bo Peng

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semicon ...

American Chemical Society2012

Coulomb blockade in a granular material made of gold nanowires

Hoël Maxime Guérin

Uniform, 2 nm diameter gold nanowires were synthesized through the reduction of gold(III) chloride in an oleylamine matrix. They were top-contacted on a Si/SiO2 substrate with metallic electrodes to manufacture back-gated transistors. Due to thermal breaka ...

2012