Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

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Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

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In semiconductors, exciton or charge carrier diffusivity is typically described as an inherent material property. Here, we show that the transport of excitons among CsPbBr3 perovskite nanocrystals (NCs) depends markedly on how recently those NCs were occup ...

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Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

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We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

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Persistent enhancement of exciton diffusivity in CsPbBr3 nanocrystal solids

Scalable Approaches to III-V Nanowires for Photodetection

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Semiconductor-based device architectures in multimaterial fibers

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon