Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas

À propos
Confidentialité
Mentions légales

Graph Chatbot

Publications associées (31)

Page 2 sur 2

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi, Eamon Patrick O'Connor

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

General invariance and equilibrium conditions for lattice dynamics in 1D, 2D, and 3D materials

Nicola Marzari, Samuel Poncé, Changpeng Lin

The long-wavelength behavior of vibrational modes plays a central role in carrier transport, phonon-assisted optical properties, superconductivity, and thermomechanical and thermoelectric properties of materials. Here, we present general invariance and equ ...

NATURE PORTFOLIO2022

Linear Electro-optic Effect in Silicon Nitride Waveguides Enabled by Electric-Field Poling

Camille Sophie Brès, Edgars Nitiss, Boris Zabelich, Anton Stroganov

Stoichiometric silicon nitride (Si3N4) is one of the most mature integrated photonic platforms for linear and nonlinear optical applications on-chip. However, because it is a centrosymmetric material, second-order nonlinear processes are inherently not ava ...

2022

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric alpha-GeTe(111)

Jan Hugo Dil

Rashba materials have appeared as an ideal playground for spin-to-charge conversion in prototype spintronics devices. Among them, alpha-GeTe(111) is a non-centrosymmetric ferroelectric semiconductor for which a strong spin-orbit interaction gives rise to g ...

Nature Portfolio2022

A Self-Consistent Return Stroke Model That Includes the Effect of the Ground Conductivity at the Strike Point

Farhad Rachidi-Haeri, Marcos Rubinstein

A current generation type return stroke model which can take into account the possible modifications of the return stroke properties by the soil conductivity at the strike point of the lightning flash is introduced. The model is also capable of incorporati ...

2022

Electric-field poling of silicon nitride waveguides for the linear phase modulation

Camille Sophie Brès, Edgars Nitiss, Boris Zabelich, Anton Stroganov

Stoichiometric silicon nitride (Si3N4) constitutes a mature platform for integrated photonics. Its pertinent properties, including wide transparency window from the visible to the mid-IR, low propagation loss, and high third-order nonlinearity, are exploit ...

SPIE-INT SOC OPTICAL ENGINEERING2022

Sensing of Surface and Bulk Refractive Index Using Magnetophotonic Crystal with Hybrid Magneto-Optical Response

Serguei Sekatski

We propose an all-dielectric magneto-photonic crystal with a hybrid magneto-optical response that allows for the simultaneous measurements of the surface and bulk refractive index of the analyzed substance. The approach is based on two different spectral f ...

2021

Multi-scale model for coupled piezoelectric-inelastic behavior

Dragan Damjanovic

In this work, we present the development of a 3D lattice-type model at microscale based upon the Voronoi-cell representation of material microstructure. This model can capture the coupling between mechanic and electric fields with non-linear constitutive b ...

TECHNO-PRESS2021

Hidden bulk and surface effects in the spin polarization of the nodal-line semimetal ZrSiTe

Helmuth Berger, Arnaud Magrez, Marco Grioni, Oleg Yazyev, Alberto Crepaldi, Mauro Fanciulli, Gianmarco Gatti, Daniel Gosalbez Martinez, Silvan Dino Marcos Roth

Local inversion symmetry breaking in centrosymmetric materials can lead to large spin polarization of the electronic band structure in separate sectors of the unit cell. Here, the authors reveal such hidden spin polarisation in ZrSiTe using spin and angle ...

NATURE RESEARCH2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Magnonic crystals with reconfigurable magnetic defects for spin-based microwave electronics

Korbinian Baumgärtl

Collective spin excitations can propagate in magnetically ordered materials in the form of waves. These so-called spin waves (SWs) or magnons are promising for low-power beyond-CMOS information processing, which does not rely anymore on the lossy movement ...

EPFL2021