Domain switching contribution to piezoelectric response in BaTiO3 single crystals

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Ferroelectric materials are used in actuators or sensors because of their non-volatile macroscopic electric polarization. GeTe is the simplest known diatomic ferroelectric endowed with exceedingly complex physics related to its crystalline, amorphous, ther ...

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Lead-free (1 - y)(Bi1/2Na1/2TiO3-xBi(1/2)K(1/2)TiO(3))-yK(0.5)Na(0.5)NbO(3) [(1 - y)(BNT-xBKT)-yKNN] (0.1

This review discusses recent advances in understanding origins of large piezoelectric properties in some ferroelectric materials. In particular, it addresses the role of polarization rotation and monoclinic phases. It is suggested that the polarization rot ...

Domain switching contribution to piezoelectric response in BaTiO3 single crystals

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Designing Singlet Fission Candidates from Donor-Acceptor Copolymers

Dielectric Actuation Techniques at the Nanoscale: Piezoelectricity and Flexoelectricity

Fabrication and Characterisation of Epitaxial PMN-PT Nano-structures

Instability of p-i-n perovskite solar cells under reverse bias

Ferroelectric Self-Poling in GeTe Films and Crystals

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Effect of K0.5Na0.5NbO3 on properties at and off the morphotropic phase boundary in Bi1/2Na1/2TiO3-Bi1/2K1/2TiO3 ceramics

Comments on origins of enhanced piezoelectric properties in ferroelectrics