Publication

Small-signal characteristics of AlInN/GaN HEMTs

Publications associées (31)

Magnetism of Single Surface Adsorbed Atoms Studied with Radio-Frequency STM

This thesis investigates the magnetic properties of single atoms and molecules adsorbed on thin magnesium oxide decoupling layers, grown on a silver single crystal. To address these systems experimentally, we use a low temperature scanning tunneling micros ...

EPFL2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Claudio Bruschini, Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Claudio Bruschini, Edoardo Charbon, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Positive Streamer Initiation in SF6/CO2 Based on Zener's Field Ionization

Guang-Yu Sun

In this study, experiments were performed to measure the inception and breakdown voltages of SF6/CO2 mixed gases with varying mixing ratios at two different pressures (1 and 2 bar). Using the preliminary data obtained from the experiments, a 3D particle mo ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Ultrahigh Electrostrictive Effect in Lead-Free Ferroelectric Ceramics Via Texture Engineering

Dragan Damjanovic, Li Jin, Yuan Sun

The electrostrictive effect, which induces strain in ferroelectric ceramics, offers distinct advantages over its piezoelectric counterpart for high-precision actuator applications, including anhysteretic behavior even at high frequencies, rapid reaction ti ...

Amer Chemical Soc2023

Spin wave dispersion of ultra-low damping hematite (α-Fe2O3) at GHz frequencies

Dirk Grundler, Ferdinand Rémy Hynek Posva, Mohammad Hamdi

Raw data associated to the manuscript ‘’Spin wave dispersion of ultra-low damping hematite (α-Fe2O3) at GHz frequencies‘’, Physical Review Materials 7, 054407(2023); doi: 10.1103/PhysRevMaterials.7.054407 Information about file fo ...

Zenodo2023

Spin wave dispersion of ultra-low damping hematite ( α−Fe2O3 ) at GHz frequencies

Dirk Grundler, Ferdinand Rémy Hynek Posva, Mohammad Hamdi

Low magnetic damping and high group velocity of spin waves (SWs) or magnons are two crucial parameters for functional magnonic devices. Magnonics research on signal processing and wave-based computation at GHz frequencies focused on the artificial ferrimag ...

2023

Biomaterial devices on Arecanut palm leaf for microwave applications

Anja Skrivervik, Sujith Raman

This paper presents an investigation on the possibility of arecanut palm leaf as a biomaterial substrate for various microwave devices such as transmission lines, antenna, filter and a radio frequency identification device (RFID). The dielectric properties ...

IEEE2023

Modelling of nonneutral plasmas trapped by electric and magnetic fields relevant to gyrotron electron guns

Guillaume Michel Le Bars

Gyrotrons are a class of high-power vacuum-electronics microwave sources, which are envisioned to play an important role in the domain of magnetically confined fusion plasmas. Indeed, only gyrotrons are capable of producing continuous electromagnetic waves ...

EPFL2023

Broadband spectroscopy and inelastic light scattering on the canted antiferromagnet hematite for antiferromagnetic magnonics

Mohammad Hamdi

Collective spin excitations propagating in magnetically ordered materials are called spin waves (SWs) or magnons. They are promising for low-power and beyond-CMOS information processing, which do not suffer from the ohmic losses. SWs in ferromagnets (antif ...

EPFL2023

Electrode Impact on the Electrical Breakdown of Dielectric Elastomer Thin Films

Herbert Shea, Fabio Beco Albuquerque

Dielectric Elastomer Actuators (DEAs) enable the realization of energy-efficient and compact actuator systems. DEAs operate at the kilovolt range with typically microampere-level currents and hence minimize thermal losses in comparison to low voltage/high ...

MDPI2023

Methodology for selecting measurement points that optimize information gain for model updating

Ian Smith, Numa Joy Bertola

Information collected through sensor measurements has the potential to improve knowledge of complex-system behavior, leading to better decisions related to system management. In this situation, and particularly when using digital twins, the quality of sens ...

2023

Biodegradable materials as sensitive coatings for humidity sensing in S-band microwave frequencies

Danick Briand, James Alec Pierce Bourely, Nicolas Francis Fumeaux, Leticia de Sousa, Oleksandr Vorobyov

Worldwide, electronic waste represents the fastest-growing stream of waste. With an increasing number of connected devices, passive and eco-friendly environmental sensing solutions need to be developed. Wireless passive devices for RFID and sensing exist, ...

2023

Nanomechanical resonators with low dissipation for quantum optomechanics

Alberto Beccari

Fields of technology as diverse as microwave filter construction, characterization of material interfaces with atomic precision, and detection of gravitational waves from astronomical sources employ mechanical resonators at their core. The utility of mecha ...

EPFL2023

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

An Efficient Signal-to-noise Approximation for Eccentric Inspiraling Binaries

Alexandra Shelest

Eccentricity has emerged as a potentially useful tool for helping to identify the origin of black hole mergers. However, eccentric templates can be computationally very expensive owing to the large number of harmonics, making statistical analyses to distin ...

IOP Publishing Ltd2022

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022