Hybrid CMOS-SET devices and circuits : modeling, simulation and design

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In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

Surface functionalization of 1D materials such as silicon nanowires is a critical preparation technology for biochemical sensing. However, existing nonselective functionalization techniques result in nonlocal binding and contamination, with potential devic ...

Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...

Decision-making permeates every aspect of human and societal development, from individuals' daily choices to the complex decisions made by communities and institutions. Central to effective decision-making is the discipline of optimization, which seeks th ...

Verification and testing of hardware heavily relies on cycle-accurate simulation of RTL. As single-processor performance is growing only slowly, conventional, single-threaded RTL simulation is becoming impractical for increasingly complex chip designs and ...

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

Image information about the state of a building after an earthquake, which can be collected without endangering the post-earthquake reconnaissance activities, can be used to reduce uncertainties in response predictions for future seismic events. This paper ...

In traditional power delivery networks, the on-chip supply voltage is provided by board-level converters. Due to the significant distance between the converter and the load, variations in the load current are not effectively managed, producing a significan ...

Let F be a family of n pairwise intersecting circles in the plane. We show that the number of lenses, that is convex digons, in the arrangement induced by F is at most 2n - 2. This bound is tight. Furthermore, if no two circles in F touch, then the geometr ...

Nonlinear epsilon-near-zero (ENZ) nanodevices featuring vanishing permittivity and CMOS-compatibility are attractive solutions for large-scale-integrated systems-on-chips. Such confined systems with unavoidable heat generation impose critical challenges fo ...

Hybrid CMOS-SET devices and circuits : modeling, simulation and design

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Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Stencil-Based Selective Surface Functionalization of Silicon Nanowires in 3D Device Architectures for Next-Generation Biochemical Sensors

3D Printing of Customizable Transient Bioelectronics and Sensors

Reliable data-driven decision-making through optimal transport

Highly Parallel RTL Simulation

Silicon nitride electric-field poled microresonator modulator

Reducing uncertainties in response predictions of earthquake-damaged masonry buildings using data from image-based inspection

Power Aware Placement of On-Chip Voltage Regulators

A Note on Lenses in Arrangements of Pairwise Intersecting Circles in the Plane

Thermo-optic epsilon-near-zero effects