Publications associées à Roadmap on atomic-scale semiconductor devices

Publications associées (11)

Integration and tunability of rare-earth-doped YSZ for next generation photonic devices

The rapid advancement of modern technology has led to a steep rise in global energy demand, posing serious challenges related to climate change and the geopolitical complexities of energy sourcing. In this context, modulators and optical amplifiers have be ...

SPIE2025

Excitonic devices based on van der Waals heterostructures

Edoardo Lopriore

The unique physical properties of two-dimensional materials have attracted substantial research efforts in the last twenty years. The possibility of stacking layered materials in freely-configurable stacks, called van der Waals heterostructures, has enable ...

EPFL2025

Integrated Short-Circuit Protection Design Based on Dual-Channel Gate Driver for Series Connected Medium-Voltage SiC MOSFETs

Drazen Dujic, Rui Wang

Series connection of Silicon carbide (SiC) MOSFETs is needed for increasing the blocking voltage of available power devices (limited to 3.3 kV in the market) and has been extensively studied, particularly in the context of voltagebalancing design during no ...

IEEE2025

Quantum-centric computation of molecular excited states with extended sample-based quantum diagonalization

Stefano Barison

The simulation of molecular electronic structure is an important application of quantum devices. Recently, it has been shown that quantum devices can be effectively combined with classical supercomputing centers in the context of the sample-based quantum d ...

IOP Publishing Ltd2025

Integrated gallium phosphide nonlinear photonics

Alberto Nardi

This thesis investigates the potential of gallium phosphide (GaP) as a platform for advanced integrated photonic devices, leveraging its exceptional optical properties. Significant advantages over traditional materials like silicon nitride (Si3N4) are offe ...

EPFL2024

Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs

Gennaro Termo

We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (i ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Ultralong Charge Carrier Recombination Time in Methylammonium Lead Halide Perovskites

László Forró, Andrzej Sienkiewicz, Márton Kollár, Ferenc Simon

Due to their exceptional photovoltaic properties, metal halide perovskites (MHPs) are extensively studied for their potential applications in solar cells. In recent years, the power conversion efficiencies of MHPs-based solar cells rapidly increased from t ...

2022

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Jürgen Brugger, Giovanni Boero, Xia Liu, Ana Conde Rubio

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

2022

Additives-free indolo[3,2-b]carbazole-based hole-transporting materials for perovskite solar cells with three yeses: Stability, efficiency, simplicity

Ulf Anders Hagfeldt, Bowen Yang, Jiajia Suo, Yeonju Kim

Indolo[3,2-b]carbazole-based hole transporting materials (HTM1-3) are developed for dopant-free pemvskite solar cells (PSCs). The newly synthesized compounds are studied as alternatives of conventional hole-transporting materials which typically require ad ...

Elsevier2022

Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors

Samuel Poncé

Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal semiconductors, owing to their superior charge-carrier mobilities and longer ...

2021

Towards Oxide Electronics: a Roadmap

Ulf Anders Hagfeldt, Francisco Sanchez, Mauro Fanciulli

At the end of a rush lasting over half a century, in which CMOS technology has been experiencing a constant and breathtaking increase of device speed and density, Moore's law is approaching the insurmountable barrier given by the ultimate atomic nature of ...

2019