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Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence

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Publications associées (33)

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A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics

Edoardo Charbon, Andrea Ruffino, Yatao Peng

An integrated circuit fabricated using industry-standard 40 nm complementary metal-oxide-semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics. ...

NATURE PORTFOLIO2022

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Catherine Erine, Halil Kerim Yildirim

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

ANTIGONE: A Programmable Energy-Efficient Current Digitizer for an ISFET Wearable Sweat Sensing System

Maher Kayal, François Krummenacher, Evgenia Voulgari

This article describes the design and the characterization of the ANTIGONE (ANalog To dIGital cONvErter) ASIC (Application Specific Integrated Circuit) built in AMS 0.35 m technology for low dc-current sensing. This energy-efficient ASIC was specifically d ...

2021

Resource Trade-Offs in Circuits and Systems: from Neurotechnology to Communications

Arda Uran

This thesis aims to explore and exploit trade-offs in integrated circuits and systems to overcome the fundamental bottlenecks faced by future data acquisition and communication systems. Specifically, we target the emerging implantable neurotechnology and t ...

EPFL2021

Random flip-flop: adding quantum randomness to digital circuits for improved cyber security, artificial intelligence and more

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

Harnessing quantum randomness for the generation of random numbers is an important concept crucial for information security and many other computer-related applications. Quantum random number generators (QRNGs) are evolving from bulky, slow, and expensive ...

SPIE2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Tzu-Hsien Shen, Catherine Erine, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Francesco Bellando, Junrui Zhang

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

2021

Laser soliton microcombs heterogeneously integrated on silicon

Tobias Kippenberg, Junqiu Liu, Rui Ning Wang, Johann Emmeram Riemensberger, Wenle Weng

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020