Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

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Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

The elastic limit tensile stress of UHPFRC is governed by contributions of the cementitious matrix and the fibrous skeleton. This paper finds that fiber orientation has significant influence on the matrix tensile strength of UHPFRC, while this is not consi ...

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

The strength of the interface between iron (Fe) and individual spherical silica (SiO2) inclusions of 5 +/- 1 mu m diameter is measured by means of in-situ micro-cantilever bending tests conducted under displacement control within a scanning electron micros ...

Owing to their high specific stiffness and strength, Carbon Fiber Reinforced Composites (CFRP) are ideal candidates for the development of lightweight high-performance structures. Within this family, thin-ply composites allow for wider design freedom and p ...

A Finite Element Model is developed to represent the mechanical behavior of WC-10 wt.% Co in compression tests. In this research, realistic three-dimensional model is obtained by slicing a sample by Focused Ion Beam and reconstituting it, resulting in two ...

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

In silicon heterojunction (SHJ) solar cells, one factor limiting efficiency is "parasitic absorption" from amorphous silicon (a-Si) at the front surface. Thus, discovery of a transparent hole-selective contact to replace p-type a-Si is a promising area of ...

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

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Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Influence of Fiber Orientation on the Elastic Limit Tensile Stress of UHPFRC

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Room-temperature strength of the interfacial bond between silica inclusions and iron

Multi-scale characterization and modeling of notched strength and translaminar fracture in hybrid thin-ply composites based on different carbon fiber grades

FEM of stress partition during compression of WC-10 wt.% Co with realistic 3D morphology

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Linking simulation and synthesis of nickel oxide hole-selective contacts for silicon heterojunction solar cells