Publication

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

Publications associées (27)

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

EPFL2023

Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

Jean-Marc Triscone, Duncan Thomas Lindsay Alexander, Jonathan Spring, Bernat Mundet

The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

WILEY2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Influence of Fiber Orientation on the Elastic Limit Tensile Stress of UHPFRC

Eugen Brühwiler, Emmanuel Denarié, Jian Zhan

The elastic limit tensile stress of UHPFRC is governed by contributions of the cementitious matrix and the fibrous skeleton. This paper finds that fiber orientation has significant influence on the matrix tensile strength of UHPFRC, while this is not consi ...

2023

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Camilla Arietta Vael-Garn

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

EPFL2023

Room-temperature strength of the interfacial bond between silica inclusions and iron

Andreas Mortensen, Alejandra Inés Slagter, David Hernandez Escobar, Sergio Perosanz Amarillo

The strength of the interface between iron (Fe) and individual spherical silica (SiO2) inclusions of 5 +/- 1 mu m diameter is measured by means of in-situ micro-cantilever bending tests conducted under displacement control within a scanning electron micros ...

Pergamon-Elsevier Science Ltd2023

Multi-scale characterization and modeling of notched strength and translaminar fracture in hybrid thin-ply composites based on different carbon fiber grades

Guillaume Clément Broggi

Owing to their high specific stiffness and strength, Carbon Fiber Reinforced Composites (CFRP) are ideal candidates for the development of lightweight high-performance structures. Within this family, thin-ply composites allow for wider design freedom and p ...

EPFL2023