Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes

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In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

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Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes

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