Publication

Proton Diffusion in Amorphous SiO2 and Hafnium Silicate by Ab Initio Molecular Dynamics

Publications associées (29)

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

In recent years, sweat has gained increasing attention from the scientific community as a new analyte for health monitoring. The main advantage with respect to the "Gold Standard" for laboratory analysis, i.e. blood, is of course the possibility of perform ...

EPFL2020

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Silicon Nitride Integrated Nonlinear Photonics

Junqiu Liu

Recently, microresonator-based dissipative Kerr soliton frequency combs ( "soliton microcomb " ) have emerged as miniaturized optical frequency combs. So far, soliton microcombs have been realized in many CMOS-compatible material platforms including silico ...

EPFL2020

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Christian Enz

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Logic-in-memory based on an atomically thin semiconductor

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Ahmet Avsar, Zhenyu Wang, Guilherme Migliato Marega, Mukesh Kumar Tripathi

The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-me ...

2020

High Force Density Textile Electrostatic Clutch

Herbert Shea, Ronan Julien Hinchet

Clutches are key elements for blocking or coupling motion in wearable systems such as soft exoskeletons, haptic clothing, and rehabilitation equipment. Electrostatic clutches (ESclutches) are compact and light, making them particularly well-suited for wear ...

Wiley2019

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Yusuf Leblebici, Thomas La Grange, Elmira Shahrabi, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Christian Enz, Igor Stolichnov, Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...

Nature Research2019