Publications associées à Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires

Publications associées (10)

Optical properties of 2D-material/III-nitride van der Waals heterostructures

Two decades after the isolation of graphene, hybrid van der Waals (vdW) heterostructures, combining 2D materials with conventional semiconductors, have garnered significant attention for their potential to create novel functionalities on established platfo ...

EPFL2025

Squaraine Dyes for Organic Photomultiplication Photodetectors with 220% External Quantum Efficiency at 1240 nm

João Pedro Ferreira Assunção, Frank Nüesch, Elodie Didier

Near-infrared (NIR) light detection at wavelengths lambda > 1100 nm is essential in modern science and technology. Emerging organic semiconductors are promising for solution-processed, flexible, and large-area NIR organic photodetectors (OPDs), but only a ...

WILEY2025

Efficient Low‐Voltage Phase Shifter with Inkjet‐Printed Liquid Crystal on a Silicon on Insulator Platform

Niels Quack, Alain Yuji Takabayashi

A new electro‐optic phase shifter device architecture consisting of two lateral rail electrodes in doped silicon close to a waveguide with a liquid crystal cladding is demonstrated. Starting with a completed silicon photonics wafer of IMEC's iSiPP50G platf ...

Wiley2025

Investigating metastability in the bandstructure of correlated matter by ultrafast photoemission spectroscopy

Lukas Jürgen Hellbrück

Advancements of laser technologies and material science have revolutionized the ability to manipulate matter through irradiation with ultrafast light pulses. This progress enables not only the study of out-of-equilibrium dynamics but also allows for the se ...

EPFL2025

Electronic structure of Bi2 Ir2 O7 probed by resonant inelastic x-ray scattering at the oxygen K edge: Metallicity, hybridization, and electronic correlations

Henrik Moodysson Rønnow

The electronic structure of metallic Bi2Ir2O7 has been investigated by a combination of soft x-ray absorption spectroscopy, x-ray emission spectroscopy (XES), and resonant inelastic x-ray scattering (RIXS) in the vicinity of the oxygen K edge. The O K-edge ...

2025

Alternative Plasmonic Materials for Fluorescence Enhancement

Olivier Martin, Stavros Athanasiou

Noble metals such as gold and silver have been used extensively for a range of plasmonic applications, including enhancing the fluorescence rate of a dye molecule, as evidenced by numerous experiments over the past two decades. Recently, a variety of doped ...

2024

3D Conjugated Hole Transporting Materials for Efficient and Stable Perovskite Solar Cells and Modules

Paul Joseph Dyson, Zhaofu Fei, Tom Theodorus Antonius Lummen, Bin Ding, Yong Ding, Keith Gregory Brooks

The orthogonal structure of the widely used hole transporting material (HTM) 2,2 ',7,7 '-tetrakis(N, N-di-p-methoxyphenylamino)-9,9 '-spirobifluorene (Spiro-OMeTAD) imparts isotropic conductivity and excellent film-forming capability. However, inherently w ...

Wiley-V C H Verlag Gmbh2024

Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Ian Michael Rousseau

We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking microphotoluminescence spectroscopy with Raman thermometry and other spectroscopic techniques, we ...

Amer Physical Soc2023

Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator

Marco Clementi

We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By ...

Optica Publishing Group2023

III-N Optoelectronic Devices: Understanding the Physics of Electro-Optical Degradation

Nicolas Grandjean, Jean-François Carlin, Camille Haller

III-N optoelectronic devices are of great interest for many applications. Visible emitters (based on InGaN) are widely used in the lighting, display and automotive fields. Ultraviolet LEDs (based on AlGaN) are expected to be widely used for disinfection, m ...

SPIE2023