Publications associées à Cryogenic Characterization and Modeling of Advanced MOSFET Technologies for Large-scale Quantum Computing

Publications associées (8)

Oxygen effects on hopping transport in polycrystalline tungsten disulfide transistors via laser-assisted doping

Tungsten disulfide (WS2), a transition metal dichalcogenide (TMD), is known for its unique optoelectronic properties, making it ideal for thin-film electronics. However, achieving the necessary improvements for practical applications requires precise contr ...

2025

Back-end-aware Fault-tolerant Quantum Oracle Synthesis

Giovanni De Micheli, Alessandro Tempia Calvino, Mingfei Yu

Quantum oracle synthesis involves compiling arbitrary Boolean functions into quantum circuits using specific quantum gates supported by the target quantum computer. The Clifford+T gate library is particularly common in fault-tolerant quantum computing syst ...

Association for Computing Machinery2025

Flexible Memristive Biosensors for Sensitive Detection of Prostate-Specific Antigen in Biological Environments

Sandro Carrara

In this work, we developed flexible polymer-based memristive-like devices specifically designed for biosensing applications. The fabricated devices consist of two gold electrodes connected by a biocompatible polymeric resistive layer made of poly(3,4-ethyl ...

2025

Technology Mapping and Optimization Algorithms for Logic Synthesis of Advanced Technologies

Alessandro Tempia Calvino

Logic synthesis is a key component of electronic design automation (EDA) tools, essential for designing high-performance, compact, and power-efficient integrated circuits. The continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technol ...

EPFL2024

Spontaneous Raman scattering as a probe of vibrational quantum coherence and plasmonic near-field

Valeria Vento

Spontaneous vibrational Raman scattering is a ubiquitous form of light-matter interaction whose description necessitates quantization of the electromagnetic field. It is usually considered an incoherent process since it stems from the fluctuations of the v ...

EPFL2024

Defects in Ge and GeSn and their impact on optoelectronic properties

Anna Fontcuberta i Morral, Andrea Giunto

GeSn has emerged as a promising semiconductor with optoelectronic functionality in the mid-infrared, with the potential of replacing expensive III-V technology for monolithic on-chip Si photonics. Multiple challenges to achieve optoelectronic-grade GeSn ha ...

AIP Publishing2024

Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures

Christian Enz, Hung-Chi Han

The subthreshold swing (SS) of MOSFETs decreases with temperature and then saturates below a critical temperature. Hopping conduction via the band tail has been proposed as the possible cause for the SS saturation. On the other hand, numerical simulations ...

Institute of Electrical and Electronics Engineers2023

Cryogenic InGaAs HEMTs with Reduced On-Resistance using Strained Ohmic Contacts

Christian Enz, Hung-Chi Han

We present InGaAs HEMTs with optimized cryogenic Ohmic contacts, for low-power qubit readout. We utilize tensile strained contact metals to reduce the barrier resistance, which is a major fraction of RSD, leading to ~50% reduction of RSD at low temperature ...

Institute of Electrical and Electronics Engineers Inc.2023