Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm

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The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

Van der Waals heterostructures (vdWHSs) enable the fabricationof complex electronic devices based on two-dimensional (2D) materials.Ideally, these vdWHSs should be fabricated in a scalable and repeatableway and only in the specific areas of the substrate t ...

Neuromorphic computing requires electronic systems that can perform massively parallel computational tasks with low energy consumption. Such systems have traditionally been based on complementary metal-oxide-semiconductor circuits, but further advances in ...

Optical tweezers are devices that can manipulate nano- and microparticles using a laser. The principle of optical tweezers is to apply a force to an object using the momentum of light. This force is very small, but it is sufficient to move things in the mi ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm

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Electronic metadevices for terahertz applications

Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation

Neuromorphic computing based on halide perovskites

Optical manipulation of plasmonic nanoparticles: Applications in surface chemistry and nano-optics

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography