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Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm

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Neuromorphic computing based on halide perovskites

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Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

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New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

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The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

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