Diode logicDiode logic (or diode-resistor logic) constructs AND and OR logic gates with diodes and resistors. An active device (vacuum tubes in early computers, then transistors in diode–transistor logic) is additionally required to provide logical inversion (NOT) for functional completeness and amplification for voltage level restoration, which diode logic alone can't provide. Since voltage levels weaken with each diode logic stage, multiple stages can't easily be cascaded, limiting diode logic's usefulness.
Low-κ dielectricIn semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide. Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another.
Logic familyIn computer engineering, a logic family is one of two related concepts: A logic family of monolithic digital integrated circuit devices is a group of electronic logic gates constructed using one of several different designs, usually with compatible logic levels and power supply characteristics within a family. Many logic families were produced as individual components, each containing one or a few related basic logical functions, which could be used as "building-blocks" to create systems or as so-called "glue" to interconnect more complex integrated circuits.
Flyback diodeA flyback diode is any diode connected across an inductor used to eliminate flyback, which is the sudden voltage spike seen across an inductive load when its supply current is suddenly reduced or interrupted. It is used in circuits in which inductive loads are controlled by switches, and in switching power supplies and inverters. Flyback circuits have been used since 1930 and were refined starting in 1950 for use in television receivers.
Active-pixel sensorAn active-pixel sensor (APS) is an , which was invented by Peter J.W. Noble in 1968, where each pixel sensor unit cell has a photodetector (typically a pinned photodiode) and one or more active transistors. In a metal–oxide–semiconductor (MOS) active-pixel sensor, MOS field-effect transistors (MOSFETs) are used as amplifiers. There are different types of APS, including the early NMOS APS and the now much more common complementary MOS (CMOS) APS, also known as the CMOS sensor.
Multi-junction solar cellMulti-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p-n junction will produce electric current in response to different wavelengths of light. The use of multiple semiconducting materials allows the absorbance of a broader range of wavelengths, improving the cell's sunlight to electrical energy conversion efficiency. Traditional single-junction cells have a maximum theoretical efficiency of 33.16%.
PhotodiodeUne photodiode est un composant semi-conducteur ayant la capacité de capter un rayonnement du domaine optique et de le transformer en signal électrique. Comme beaucoup de diodes en électronique elle est constituée d'une jonction PN. Cette configuration de base fut améliorée par l'introduction d'une zone intrinsèque (I) pour constituer la photodiode PIN. En absence de polarisation (appelé mode photovoltaïque) elle crée une tension. En polarisation inverse par une alimentation externe (mode photoampérique), elle crée un courant.
Technologievignette|250px|Durant la seconde moitié du , l'humanité a atteint la maîtrise technologique nécessaire pour quitter pour la première fois l'atmosphère terrestre et partir à la conquête de l'espace. La technologie est l'étude des outils et des techniques. Le terme désigne les observations sur l'état de l'art aux diverses périodes historiques, en matière d'outils et de savoir-faire. Il comprend l'art, l'artisanat, les métiers, les sciences appliquées et éventuellement les connaissances.
Détection de neutronsvignette|Structure des quarks neutroniques (forme annulaire) La détection de neutrons est la détection effective de neutrons entrant dans un détecteur. Il existe deux aspects de la détection effective de neutrons : l'aspect matériel (hardware) et l'aspect logiciel (software). Le matériel de détection désigne le genre de détecteur utilisé (le plus souvent, un détecteur à scintillation) et l'électronique qui y est liée. D'autre part, le montage du matériel définit aussi les paramètres expérimentaux, tels que la distance entre source et détecteur ou l'angle solide du détecteur.
Logic levelIn digital circuits, a logic level is one of a finite number of states that a digital signal can inhabit. Logic levels are usually represented by the voltage difference between the signal and ground, although other standards exist. The range of voltage levels that represent each state depends on the logic family being used. A logic-level shifter can be used to allow compatibility between different circuits. In binary logic the two levels are logical high and logical low, which generally correspond to binary numbers 1 and 0 respectively or truth values true and false respectively.
Transparent conducting filmTransparent conducting films (TCFs) are thin films of optically transparent and electrically conductive material. They are an important component in a number of electronic devices including liquid-crystal displays, OLEDs, touchscreens and photovoltaics. While indium tin oxide (ITO) is the most widely used, alternatives include wider-spectrum transparent conductive oxides (TCOs), conductive polymers, metal grids and random metallic networks, carbon nanotubes (CNT), graphene, nanowire meshes and ultra thin metal films.
MODFETLe MODFET (modulated-doping field effect transistor) ou transistor à effet de champ à dopage modulé est un type de transistor à effet de champ (FET). Il est connu aussi sous le nom de HEMT (High Electron Mobility Transistor), ou transistor à électron à haute mobilité. Comme les autres FET, les MODFET sont utilisés dans les circuits intégrés comme interrupteur numérique. vignette|Structure de bande d'un transistor HEMT n-AlGaAs/GaAs montrant la présence d'une zone de gaz d'électrons 2D.
