A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power i ...

The temperature coefficient (TC) is an essential figure of merit to accurately evaluate solar cell performance at various operating temperatures and hence enabling the comparison between different cell technologies. Recently, solar cells that use passivati ...

Functional printing is a versatile mass production method that has gained considerable scientific and industrial attention in the past few years. A wide range of electronics from passive circuit components (e.g., resistors and interconnects) to high-perfor ...

At the FSE conference of ToSC 2018, Kranz et al. presented their results on shortest linear programs for the linear layers of several well known block ciphers in literature. Shortest linear programs are essentially the minimum number of 2-input xor gates r ...

Optical frequency combs have a wide range of applications in science and technology(1). An important development for miniature and integrated comb systems is the formation of dissipative Kerr solitons in coherently pumped high-quality-factor optical micror ...

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

A closed time-reversal (TR) cavity has been considered a purely theoretical concept whose experimental realization was assumed to be impossible. In this article, we demonstrate that it is, in fact, possible to realize a closed TR cavity using a network of ...

Studying nanomaterial piezoelectricity and triboelectricity is attractive for energy and sensing applications. However, quantitative characterisation of electromechanical effects in nanomaterials is challenging due to practical limitations and possible com ...

This paper introduces a thermally-compensated magnetic hysteresis model, capable of accurately determining core losses of ferrite materials while accounting for core temperature variations. The employed model is based on permeance-capacitance analogy and i ...

Many engineering fields rely on frequency-domain dynamical systems for the mathematical modeling of physical (electrical/mechanical/etc.) structures. With the growing need for more accurate and reliable results, the computational burden incurred by frequen ...

The synthesis and characterization of three novel HTMs with different highest occupied molecular orbital (HOMO) energy levels and their performances in MAPbI(3)-based devices in comparison with Spiro-OMeTAD is reported. Without systematic optimization, the ...

A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects

Chattez avec Graph Search

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Temperature‐dependent performance of silicon heterojunction solar cells with transition‐metal‐oxide‐based selective contacts

2D Material Based Inks For Room Temperature Printed Electronics

Further Results on Efficient Implementations of Block Cipher Linear Layers

Integrated turnkey soliton microcombs

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

A Closed Time-Reversal Cavity for Electromagnetic Waves in Transmission Line Networks

Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

Thermally-Compensated Magnetic Core Loss Model for Time-Domain Simulations of Electrical Circuits

Model order reduction based on functional rational approximants for parametric PDEs with meromorphic structure

Hole transporting materials for perovskite solar cells and a simple approach for determining the performance limiting factors