Publication

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Publications associées (32)

Increasing Functionality of III-V Nanowires on Silicon Substrates

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Scalable Nanowire Networks: Growth and Functionality

Martin George Friedl

With the rise of quantum computing and recent experiments into topological quantum computers come exciting new opportunities for III-V semiconductor quantum nanostructures. In this thesis, we explore the scalable fabrication of patterned arrays and branche ...

EPFL2020

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

Clarissa Convertino

Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...

EPFL2020

Crystallization and Organic Field-Effect Transistor Performance of a Hydrogen-Bonded Quaterthiophene

Philippe Bugnon, Rosario Scopelliti, Stéphane Suarez, Anne-Clémence Corminboeuf, Holger Frauenrath, Jan Gebers, Riccardo Petraglia, Piotr De Silva, Bilal Özen

Crystalline thin films of pi-conjugated molecules are relevant as the active layers in organic electronic devices. Therefore, materials with enhanced control over the supramolecular arrangement, crystallinity, and thin-film morphology are desirable. Herein ...

2020

Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Christophe Ballif, Philipp Friedrich Hermann Löper, Andrea Ingenito

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...

ELSEVIER2019

Liquid electromigration in gallium-based biphasic thin films

Stéphanie Lacour, Hadrien Olivier Michaud

Liquid metals have recently gained interest as a material of choice for soft and stretchable electronic circuits, thanks to their virtually infinite mechanical failure strain and high electrical conductivity. Gallium-based thin films are obtained by deposi ...

2019

Contributions to the contact resistivity in fired tunnel-oxide passivating contacts for crystalline silicon solar cells

Christophe Ballif, Franz-Josef Haug, Frank Meyer, Andrea Ingenito, Sofia Libraro

We investigate the contact resistivity of p-type passivating contacts for silicon solar cells. Our contact structures are compatible with firing, a rapid annealing process similar to the one used for sintering of the screen-printed metallisation in solar c ...

2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

High performance Fully-vertical GaN-on-Si power MOSFETs

Elison de Nazareth Matioli, Reza Soleiman Zadeh Ardebili, Chao Liu

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

IEEE2019

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

Elison de Nazareth Matioli, Georgios Kampitsis, Remco Franciscus Peter van Erp

In this paper, a high step-up magnetic-less DC/DC nX converter is designed and experimentally evaluated. GaN transistors are applied in a nX converter topology, yielding ultrahigh power density and high conversion efficiency. The absence of magnetic materi ...

IEEE2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019