Cavity quantum electrodynamics with systems of site-controlled quantum dots and photonic crystal cavities

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Hybrid silicon photonics for terahertz applications

Ileana-Cristina Benea-Chelmus

This talk will highlight opportunities for terahertz science and technology from nonlinear integrated photonic circuits by exploring waveguides, resonators and terahertz antennas. Their present and future applications in metrology, emission and waveform co ...

Spie-Int Soc Optical Engineering2024

Transition to chaos in extended systems and their quantum impurity models

Camille Didier Georges Aron

Chaos sets a fundamental limit to quantum-information processing schemes. We study the onset of chaos in spatially extended quantum many-body systems that are relevant to quantum optical devices. We consider an extended version of the Tavis-Cummings model ...

Iop Publishing Ltd2024

Quantum Protocols for ML, Physics, and Finance

Grzegorz Adam Gluch

In this thesis, we give new protocols that offer a quantum advantage for problems in ML, Physics, and Finance. Quantum mechanics gives predictions that are inconsistent with local realism. The experiment proving this fact (Bell, 1964) gives a quantum proto ...

EPFL2024

MEMS-based Tunable Metasurface for Reflective Display Applications

Dorian Giraud Herle

In an era where portable electronic devices are indispensable for a wide range of activities, the need for displays that provide both long-lasting battery life and excellent visibility in different lighting conditions is increasingly important. Emissive di ...

EPFL2024

Photoinduced Second-Order Nonlinearities in Centrosymmetric Media

Ozan Yakar

The interaction of light and matter enables nonlinear frequency conversion and the creation of coherent currents. The optical control of electric currents is of fundamental relevance and prominent research focus in the last decades. These photocurrents ena ...

EPFL2024

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Zihan Li, Terence Albert Emile Blésin, Chengli Wang, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao, Alisa Davydova

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Investigating Non-equilibrium Physics in Wide Bandgap Semiconductors and Quantum Materials via Ultrafast Spectroscopy

Hui-Yuan Chen

This thesis uses femtosecond laser spectroscopy in studying strong correlation in condensed matters that are pertinent to future technology: a wide bandgap perovskite and a quantum material, with the employment of ultrafast time-resolved spectroscopy in th ...

EPFL2024

Silicon nitride electric-field poled microresonator modulator

Camille Sophie Brès, Edgars Nitiss, Boris Zabelich, Anton Stroganov, Christian André Clément Lafforgue

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

2024

Mechanically induced correlated errors on superconducting qubits with relaxation times exceeding 0.4 ms

Xuxin Wang, Tobias Kippenberg, Marco Scigliuzzo, Amir Youssefi, Jiahe Pan, Mahdi Chegnizadeh, Shingo Kono

Superconducting qubits are among the most advanced candidates for achieving fault-tolerant quantum computing. Despite recent significant advancements in the qubit lifetimes, the origin of the loss mechanism for state-of-the-art qubits is still subject to i ...

Nature Portfolio2024

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024