On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

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Lignin hydrogenolysis is a key step in the sustainable production of renewable bio-based chemicals and fuels. Heterogeneous metal catalysts have led to high yields but they rapidly deactivate, notably due to nanoparticle sintering and carbonaceous deposit ...

Continuous development of thin film deposition technologies is essential for the fabrication of films that meet the specific requirements of their target applications and working conditions. Therefore, it is necessary to increase the number of accessible a ...

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-ear ...

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In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitig ...

Perovskite solar cells have been established as a disruptive technology in the domain of photo-voltaics. Their facile, low-temperature processing and high-power conversion efficiency make them stand-out among other mature solar technologies. The performanc ...

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy

Chattez avec Graph Search

Sinter-Resistant Nickel Catalyst for Lignin Hydrogenolysis Achieved by Liquid Phase Atomic Layer Deposition of Alumina

Plasma-Assisted Hybrid Vapour Deposition Technology for Thin Film Fabrication

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

Vapor Deposition of Perovskite Solar Cells

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Composition and Interface Engineering of High Performing Perovskite Solar Cells

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition