Publications associées à Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

Publications associées (34)

Cryogenic Operation of Silicon Photomultiplier Arrays

Olivier Schneider, Guido Haefeli, Frédéric Blanc, Lesya Shchutska, Federico Ronchetti, Radoslav Marchevski, Gianluca Zunica, Esteban Curras Rivera

The LHCb experiment at CERN has been upgraded for the Run 3 operation of the Large Hadron Collider (LHC). A new concept of tracking detector based on Scintillating Fibres (SciFi) read out with multichannel silicon photomultipliers (SiPMs) was installed dur ...

IOP Publishing Ltd2025

Simultaneous Irradiation and Testing for Radiation Damage Evaluation in Actively Biased SiPMs and Other Devices

Chiara Perrina, Jennifer Maria Frieden

A portable opto-electronic device test bench together with a neutron irradiation setup at Reactor Argentino 1 (RA-1) facility in Buenos Aires (Argentina) is presented. The irradiation with neutrons is performed to reproduce the expected damage the devices ...

Institute of Electrical and Electronics Engineers Inc.2024

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

Ming-Lo Wu

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Performance evaluation of radon active sensors and passive dosimeters at low and high radon concentrations

Dusan Licina, Joan Frédéric Rey

Radon is a naturally occurring radioactive gas that has the potential to accumulate in buildings and over time, causes lung cancer in humans. Present methods for radon measurements are disparate, which pose challenges to benchmark radon concentrations and ...

Pergamon-Elsevier Science Ltd2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Waterborne Virus Transport and Risk Assessment in Lake Geneva Under Climate Change

Tamar Kohn, Chaojie Li

Climate changes influence lake hydrodynamics and radiation levels and thus may affect the fate and transport of waterborne pathogens in lakes. This study examines the impact of climate change on the fate, transport, and associated risks of four waterborne ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Nicolas Würsch, Sylvain Dunand

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

Edoardo Charbon, Francesco Piro

MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Ride the Tide of Traffic Conditions: Opportunistic Driving Improves Energy Efficiency of Timely Truck Transportation

Wenjie Xu

We study the problem of minimizing fuel consumption of a heavy-duty truck traveling across the national highway network subject to a hard deadline. We focus on a real-world setting that traversing a road segment is subject to variable speed ranges due to d ...

IEEE Institute of Electrical and Electronics Engineers2023

Video-driven simulation of lower limb mechanical loading during aquatic exercises

Jessy Lauer

Understanding the mechanical demands of an exercise on the musculoskeletal system is crucial to prescribe effective training or therapeutic interventions. Yet, that knowledge is currently limited in water, mostly because of the difficulty in evaluating ext ...

ELSEVIER SCI LTD2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Gennaro Termo, Jean-Michel Sallese, Adil Koukab

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Radiobiology of Radiosurgery for Neurosurgeons

Constantin Tuleasca

Stereotactic radiosurgery (SRS) is a precise focusing of radiation to a targeted point or larger area of tissue. With advances in technology, the radiobiological understanding of this modality has trailed behind. Although found effective in both short- and ...

2023

Method and setup for light detection and ranging

Tobias Kippenberg, Johann Emmeram Riemensberger, Anton Lukashchuk

A method and a setup for light detection and ranging are disclosed. The setup is configured to carry out the following method: generating signal radiation (S) at multiple signal frequencies (fs) with an optical signal source (1), wherein the signal radiati ...

2023

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Edoardo Charbon, Francesco Piro

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

Iop Publishing Ltd2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023