Publication

System and method for removing scalloping and tapering effects in high aspect ratio through-silicon vias of wafers

Publications associées (30)

Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instan ...

ELSEVIER SCIENCE SA2021

{10(1)over-bar2} twinning mechanism during in situ micro-tensile loading of pure Mg: Role of basal slip and twin-twin interactions

Johann Michler, Amit Sharma, Daniele Casari, Roland Logé, Xavier Maeder, Nicolò Maria Della Ventura

An SEM in situ uniaxial tensile testing setup allowing HR-EBSD acquisition during deformation was used to study the extension twinning mechanism in magnesium(Mg) at the micron scale. Structures were fabricated with two different crystal orientations, respe ...

2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Smart Slit Assembly Employing Continuously Tunable MEMS Shutter

Benedikt Guldimann, Niels Quack, Gergely Huszka, Hamed Sattari, Anton Lagosh

We present the concept and detailed design of a Smart Slit Assembly for next generation spectrometers, and we experimentally demonstrate operation of an individual 221 mu m x 111 mu m smart slit channel employing a MEMS actuated shutter to continuously mod ...

SPIE-INT SOC OPTICAL ENGINEERING2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Mario Joe Lehmann, Andrea Ingenito, Audrey Marie Isabelle Morisset

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

Synthesis, structural and magnetic characterization of thin films of the chiral magnets CoZnMn and FeGe

Anna Kúkol'ová

Skyrmions are topologically protected nanometer-sized magnetic vortices that have sparked interest for future spintronics applications aiming at high-density, high-speed and low-power consuming magnetic memory devices. One type of skyrmions appears in non- ...

EPFL2021

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza, Vladimir Dubrovskii

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

American Chemical Society (ACS)2021

Laser soliton microcombs heterogeneously integrated on silicon

Rui Ning Wang, Tobias Kippenberg, Chao Xiang, Junqiu Liu, Wenle Weng, Zeyu Zhang, Zeyu Zhang

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021

Structure evolution, bandgap, and dielectric function in La-doped hafnium oxide thin layer subjected to swift Xe ion irradiation

Philippe Buffat, Elena Suvorova Buffat

High-resolution transmission electron microscopy, electron diffraction, and electron energy-loss spectroscopy provide information on the structural evolution, dielectric function, and bandgap values of nanocrystalline 10nm thick lanthanum doped hafnia (La: ...

AMER INST PHYSICS2020