Publication

Large-Stroke Dielectric Elastomer Actuators With Ion- Implanted Electrodes

Publications associées (30)

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. ...

Institute of Electrical and Electronics Engineers2019

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

Elison de Nazareth Matioli, Jun Ma, Taifang Wang, Luca Nela

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

Kai Cheng, Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Catherine Erine, Luca Nela

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...

IEEE2019

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Catherine Erine, Luca Nela

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

High-performance nanowire-based E-mode Power GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu, Luca Nela

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate achieved by a nanostructured gate region in combination with a large work-function gate met ...

IEEE2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Remco Franciscus Peter van Erp, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

Alexis Pierre Henri Marette

This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate. Fi ...

EPFL2018

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Elison de Nazareth Matioli, Jun Ma

We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a sma ...

Institute of Electrical and Electronics Engineers2017

Inkjet 3D printing of UV and thermal cure silicone elastomers for dielectric elastomer actuators

Samuel Rosset, Herbert Shea, Samuel Schlatter, David James McCoul

Dielectric elastomer actuators (DEAs) are an attractive form of electromechanical transducer, possessing high energy densities, an efficient design, mechanical compliance, high speed, and noiseless operation. They have been incorporated into a wide variety ...

Institute of Physics2017

Acoustic emission source detection and wave generation on a working plate using piezoelectric actuators

Xinchang Liu

In modern automated assembly lines, part feeders play an important role to separate and sort parts. Agility and flexibility are required to achieve a good yield for different types of parts. The common working principle is to vibrate a working plate driven ...

EPFL2017