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Efficient random number generation techniques for CMOS single-photon avalanche diode array exploiting fast time tagging units

Publications associées (31)

Programmable frequency-bin quantum states in a nano-engineered silicon device

Frequency-bin qubits get the best of time-bin and dual-rail encodings, but require external modulators and pulse shapers to build arbitrary states. Here, instead, the authors work directly on-chip by controlling the interference of biphoton amplitudes gene ...

Nature Portfolio2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Yanfei Zhao, Juan Francisco Gonzalez Marin, Ahmet Avsar, Cheol Yeon Cheon, Kristians Cernevics, Zhenyu Wang, Mukesh Kumar Tripathi, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023

Neuromorphic computing based on halide perovskites

Mohammad Khaja Nazeeruddin, Feng Gao

Neuromorphic computing requires electronic systems that can perform massively parallel computational tasks with low energy consumption. Such systems have traditionally been based on complementary metal-oxide-semiconductor circuits, but further advances in ...

Nature Portfolio2023

Optimal Matching of Random Parts

Thomas Alois Weber

This paper examines the minimization of the cost for an expected random production output, given an assembly of finished goods from two random inputs, matched in two categories. We describe the optimal input portfolio, first using the standard normal appro ...

2022

Gradient-based optimisation of the conditional-value-at-risk using the multi-level Monte Carlo method

Fabio Nobile, Sundar Subramaniam Ganesh

In this work, we tackle the problem of minimising the Conditional-Value-at-Risk (CVaR) of output quantities of complex differential models with random input data, using gradient-based approaches in combination with the Multi-Level Monte Carlo (MLMC) method ...

2023

Assessment of the Bundle SNSPD Plus FPGA-Based TDC for High-Performance Time Measurements

Christophe Marcel Georges Galland, Andrea Costa, Santiago Tarrago Velez

Counting single photons and measuring their arrival time is of crucial importance for imaging and quantum applications that use single photons to outperform classical techniques. The investigation of the coincidence, i.e. correlation, between photons can b ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

DFAulted: Analyzing and Exploiting CPU Software Faults Caused by FPGA-Driven Undervolting Attacks

Mirjana Stojilovic, David Dervishi, Dina Gamaleldin Ahmed Shawky Mahmoud

Field-programmable gate arrays (FPGAs) combine hardware reconfigurability with a high degree of parallelism. Consequently, FPGAs offer performance gains and power savings for many applications. A recent trend has been to leverage the hardware versatility o ...

2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

On the Double Descent of Random Features Models Trained with SGD

Volkan Cevher, Fanghui Liu

We study generalization properties of random features (RF) regression in high dimensions optimized by stochastic gradient descent (SGD) in under-/overparameterized regime. In this work, we derive precise non-asymptotic error bounds of RF regression under b ...

2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022