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p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Publications associées (32)

Silicon nitride electric-field poled microresonator modulator

Camille Sophie Brès, Anton Stroganov, Edgars Nitiss, Boris Zabelich, Christian André Clément Lafforgue

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

2024

A modular multiple frequency inductive link to wirelessly power multiple miniaturized implants

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

A modular multiple frequency coils inductive link system to wirelessly provide power for at least a medical implant at an output of a receiving coil, whereby the receiving coil is configured to be implanted in an organism. The modular multiple frequency co ...

2024

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Drazen Dujic, Chengmin Li

The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Heng Fang, Rui Lu, Chengmin Li

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

On Energy Control of Modular Multilevel Converters

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Owing to the advancements in the area of power electronics, efficient and flexible ac to dc conversion is made possible, bringing back into focus the idea of the dc power transmission at various voltage levels. Several technical and economical factors advo ...

EPFL2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Elison de Nazareth Matioli, Hongkeng Zhu

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

2023

Voltage-driven Reactivity of Liquid Ga and CuGa Nanoparticles for Electrocatalytic CO2 Reduction and Synthesis

Valery Okatenko

The rising atmospheric level of carbon dioxide, CO2, contributes to climate change and poses urgent need to find scalable solutions both to decrease its emissions and to be able to recycle it, if the goals of Paris Agreement to limit the temperature rise a ...

EPFL2023

All-inorganic halide perovskites for air-processed "n-i-p" monolithic perovskite/organic hybrid tandem solar cells exceeding 23% efficiency

Mohammad Khaja Nazeeruddin

All-perovskite tandem solar cells recently surpassed 26% power conversion efficiency using a Sn(ii)-based halide perovskite rear subcell, which introduces several issues related to the chemical instability and the effectiveness of common, inexpensive inter ...

Royal Soc Chemistry2023

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

Mahsa Shoaran, Yasemin Engür

This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such as neural interfa ...

ArXiv2023

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Alexandre Schmid, Mehdi Saberi

This paper presents a new power-efficient and high-speed voltage level shifter. In the proposed structure, the existing contentions at the internal nodes are reduced using auxiliary transistors and feedback networks, leading to a significant reduction in t ...

IEEE2023