Design and Optimization of Operational Amplifiers for SC Systems - a Comparative Study in CMOS 0.8 μm, 0.35 μm, 0.18 μm Technologies

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Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

Flow Cell Arrays (FCA) technology employs microchannels filled with an electrolytic fluid to concurrently provide cooling and power generation to integrated circuits (ICs). This solution is particularly appealing for Three-Dimensional Multi-Processor Syste ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV pa ...

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180 nm CIS process. The presented chip embeds two pixel variants, one based on a body-effect-canceled ...

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

We present an all-digital application specific integrated circuit (ASIC) that implements Bluetooth Low Energy (BLE)-compatible backscatter communication. The ASIC was fabricated in a 65 nm CMOS process and occupies an active area of 0.12 mm(2) while consum ...

In this article, a cryo-CMOS receiver integrated with a frequency synthesizer for scalable multiplexed readout of qubits is presented, focusing on radio frequency (RF) reflectometry readout of silicon-based semiconductor spin qubits/quantum dots. The propo ...

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

Design and Optimization of Operational Amplifiers for SC Systems - a Comparative Study in CMOS 0.8 μm, 0.35 μm, 0.18 μm Technologies

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Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Thermal and Power-Aware Run-Time Performance Management of 3D MPSoCs with Integrated Flow Cell Arrays

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

An All-Digital 1 Mbps, 57 pJ/bit Bluetooth Low Energy (BLE) Backscatter ASIC in 65 nm CMOS

A Cryo-CMOS Wideband Quadrature Receiver With Frequency Synthesizer for Scalable Multiplexed Readout of Silicon Spin Qubits

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor