Publication

High-speed and low-noise AlInN/GaN HEMTs on SiC

Publications associées (31)

GaN vertical power devices on silicon substrates

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Chao Liu, Alessandro Floriduz

We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, re ...

IOP PUBLISHING LTD2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Luca Nela

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Maria Vittoria Oropallo

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

2021

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

Edoardo Charbon, Andrea Ruffino, Yatao Peng

A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals ar ...

2021

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Chunmin Zhang

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

EPFL2021

Sequential manufacturing via intra-additive hybrid materials approach for fully roll-to-roll processed flexible organic thin film transistors

Jaemin Kim

Conventional conductive films that are used as electrodes in organic thin film transistors (OTFTs) are susceptible to mechanical deformation, limiting the applicability of such films in flexible wearable electronic devices. To address this limitation, a hy ...

ELSEVIER SCI LTD2021

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Catherine Erine, Luca Nela

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

AIP American Institute of Physics2021