Publication

On the Dynamic Performance of Laterally Gated Transistors

Publications associées (31)

In-situ atomic level observation of the strain response of graphene lattice

Strain is inevitable in two-dimensional (2D) materials, regardless of whether the film is suspended or supported. However, the direct measurement of strain response at the atomic scale is challenging due to the difficulties of maintaining both flexibility ...

Nature Portfolio2023

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Jean-Michel Sallese, Adil Koukab

A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second elec ...

2023

Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays

Luca Capua

Medical research and technological advancements are heading towards tailored healthcare approaches that prioritize individual needs, allowing for more accurate diagnoses, more effective treatments, and better patient outcomes overall. One such approach is ...

EPFL2023

In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics

Eleni Stavrinidou, Matteo Cucchi

Next-generation implantable computational devices require long-term-stable electronic components capable of operating in, and interacting with, electrolytic surroundings without being damaged. Organic electrochemical transistors (OECTs) emerged as fitting ...

Wiley-V C H Verlag Gmbh2023

Nano-MOSFET - Foundation of Quantum Computing Part I

Edoardo Charbon, Fabio Sebastiano

As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

A 3.3-Gb/s SPAD-Based Quantum Random Number Generator

Edoardo Charbon, Francesco Gramuglia, Pouyan Keshavarzian, Mario Stipcevic

Quantum random number generators (QRNGs) are a burgeoning technology used for a variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with an extraction or bit generation circuit in or ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Energy Efficient Sensing using Steep Slope Devices

Teodor Rosca

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

EPFL2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022