Publication

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Publications associées (31)

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

Single Chip Dynamic Nuclear Polarization Microsystems

Nergiz Sahin Solmaz

Nuclear magnetic resonance (NMR) methods are powerful tools employed in many fields, including physics, chemistry, material science, biology, and medicine. The use of NMR methodologies in an even wider range of applications is often hindered by the relativ ...

EPFL2023

Miniaturised, Wireless and Distributed Neural Interface Toward Cortical Visual Prosthesis

Gian Luca Barbruni

Over the last decades, implantable neural interfaces have been extensively explored and effectively deployed to address neurological and mental health disorders. The existing solutions present several limitations. Firstly, the physical size of the implanta ...

EPFL2023

Spin wave dispersion of ultra-low damping hematite (α-Fe2O3) at GHz frequencies

Dirk Grundler, Ferdinand Rémy Hynek Posva, Mohammad Hamdi

Raw data associated to the manuscript ‘’Spin wave dispersion of ultra-low damping hematite (α-Fe2O3) at GHz frequencies‘’, Physical Review Materials 7, 054407(2023); doi: 10.1103/PhysRevMaterials.7.054407 Information about file fo ...

Zenodo2023

Beam homogeneity of caesium seeded SPIDER using a direct beamlet current measurement

The ITER Heating Neutral Beam (HNB) source prototype SPIDER (Source for the Production of Ions of Deuterium Extracted from a Radio frequency plasma), hosted at the Neutral Beam Test Facility (NBTF) in Padova, Italy, has recently started operating with evap ...

ELSEVIER SCIENCE SA2023

Spin wave dispersion of ultra-low damping hematite ( α−Fe2O3 ) at GHz frequencies

Dirk Grundler, Ferdinand Rémy Hynek Posva, Mohammad Hamdi

Low magnetic damping and high group velocity of spin waves (SWs) or magnons are two crucial parameters for functional magnonic devices. Magnonics research on signal processing and wave-based computation at GHz frequencies focused on the artificial ferrimag ...

2023

Time-Domain Integration of Broadband Terahertz Pulses via Tapered Two-Wire Waveguide

Alessandro Tomasino

In this work, we report on the implementation of a time-domain integrator device operating on arbitrary broadband Terahertz (THz) pulses. This analog signal-processing functionality is implemented by employing a two-wire waveguide (TWWG) variant, based on ...

IEEE2023

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022