Publication

Direct Observation of Capacitor Switching Using Planar Electrodes

Publications associées (30)

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Low-Power and Wide-Tuning Range Frequency Generation for FMCW Radars in Advanced CMOS Technologies

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Nowadays, the internet of things (IoT) nodes have started to spread in various domains of our society, from the industrial to the domestic environment. The remote sensing is one among their fundamental functions. The implementation of a radio detection and ...

EPFL2021

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Andrada Alexandra Muntean, Esteban Venialgo Araujo, Emanuele Ripiccini

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Experimental Evaluation of Steel Columns under Seismic Hazard-Consistent Collapse Loading Protocols

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This paper presents results from 21 large-scale experiments on steel columns that examined their collapse behavior as related to steel moment resisting frames (MRFs). The test specimens included wide-flange and square hollow structural shapes (HSS) and wer ...

2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Luca Capua, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Igor Stolichnov, Mihai Adrian Ionescu, Teodor Rosca, Ali Saeidi, Matteo Cavalieri, Eamon Patrick O'Connor, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Energy Level Alignment at the Cobalt Phosphate/Electrolyte Interface: Intrinsic Stability vs Interfacial Chemical Reactions in 5 V Lithium Ion Batteries

Nicola Marzari, Matteo Cococcioni

The intrinsic stability of the 5 V LiCoPO4-LiCo2P3O10 thin-film (carbon-free) cathode material coated with MoO3 thin layer is studied using a comprehensive synchrotron electron spectroscopy in situ approach combined with firstprinciple calculations. The at ...

AMER CHEMICAL SOC2022

Electrical transport properties of Ru1-xTixO2 films deposited by magnetron sputtering technique

Rosendo Sanjines, Silviu Cosmin Sandu

The optical and electrical properties of Ru1-xTixO2 (0

PERGAMON-ELSEVIER SCIENCE LTD2021

Reinforced polypyrrole with 2D graphene flakes decorated with interconnected nickel-tungsten metal oxide complex toward superiorly stable supercapacitor

Ulf Anders Hagfeldt, Seyyed Alireza Hashemi

Prompt development of electronic devices and sensors raised the requirement for design/fabrication of advanced energy sources capable of providing considerable amount of energy for consuming platforms through practical nanotechnological approaches. For thi ...

ELSEVIER SCIENCE SA2021

High Frequency Operation of Series-Connected IGCTs for Resonant Converters

Drazen Dujic, Gabriele Ulissi

Series connected IGCTs find application in hard-switched commercial power converters at the MW power levels. Expanding the application of these devices to medium voltage dc-dc resonant converters is of great interest due to the IGCTs low conduction losses. ...

2021