Improved Screening Ability of Ferroelectric-Semiconductor Interface

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

An attractive combination of properties of the ferroelectric copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)), including a relatively high spontaneous polarization and low dielectric constant as well as low processing temperature makes this material useful for studying the ferroelectric gate operation for 1T nonvolatile ferroelecetric memory applications. Here we explore a silicon-based ferroelectric field effect transistor with P(VDF-TrFE) gate showing a persistent switching of the drai

We present the fabrication and the electrical characterization of ferroelectric tunnel FETs (Fe-TFETs). This novel family of hysteretic switches combines the low subthreshold power of band-to-band tunneling devices with the retention characteristics of Fe gate stacks, offering some interesting features for future one-transistor (1T) memory cells. We report I-on/I-off larger than 10(5) and I-off on the order of 100 fA/mu m in micrometer-scale p-type Fe-TFETs fabricated on ultrathin-film (fully depleted) sili

Hematite is a promising material for solar energy conversion via photo-electrochemical water splitting. However, the precise control of substitutional doping and nanometer feature size is important for high photon harvesting efficiency. Doped and nanostructured hematite electrodes can be prepared by a simple solution-based colloidal approach however, a high temperature (800 degrees C) annealing is required to activate the dopant atoms. This high temperature annealing step also increases the particle size ab

Several aspects of the science and technology of thin film silicon for photovoltaic applications will be presented. The potential advantages of this technology over crystalline wafer technology will be discussed. A basic understanding of the material properties of thin film silicon layers enables to assess their potential and limitations when used in photovoltaic devices. A brief review of the production technology for thin films will be given with particular emphasis on amorphous and microcrystalline silic

In this letter, we propose a lateral asymmetric strain profile in a silicon nanowire or ultrathin silicon film as a key technology booster for the performance of all-silicon Tunnel FETs. We demonstrate by simulation that a Gaussian tensile-strain profile with a maximum placed at the source side of a nanowire Tunnel FET with a 50-nm channel length provides an optimized solution for a low-standby-power switch. This leads to the following: 1) ultralow I-off (more than three decades lower than in the case of a

Performance of piezoresistive thick-film pressure sensors on steel substrates is hindered by the high required firing temperatures of the layers, which cause degradation of the substrate mechanical properties. Special steels or alloys that are relatively unaffected by these temperatures are available, but their cost is very high. A much more promising alternative is the reduction of the thick-film firing temperature, in order to allow application of the standard high-strength steels used in thin-film cells.

Over the past decade a new family of optoelectronic devices has emerged whose performance is enhanced by placing the active device structure inside a Fabry–Perot resonantmicrocavity [P. E. Green, IEEE Spectrum 13 (2002)]. The increased optical field allows photodetectors to be made thinner and therefore faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. We have demonstrated a variety of resonant cavity enhanced (RCE) photodetectors in compound semiconductors [B. Yang

We investigated the electronic structure of epitaxially grown silver films on Cu(111) with and without adsorption of cesium by means of scanning tunneling spectroscopy and two-photon photoemission. This system has been chosen as a model system to engineer and measure the dynamics of charge-transfer processes between an adsorbate and a heterogeneous substrate. Special emphasis has been laid on the investigation of the energy shift of the Shockley-type surface state and an excited cesium resonance as a functi

The present work investigates the possibility of selective electrochemical metal deposition on ion implanted p-Si. The idea is that defects introduced into the substrate by ion implantation make it more susceptible to electrochemical reactions compared to intact Si; this increased sensitivity is to be used for selective reactions at the defect sites. It is believed that the increased reactivity is due to a lowering of the Schottky barrier breakdown potential, Ubd, of the semiconductor-electrolyte interface

Unexpectedly high-longitudinal piezoelectric coefficients have recently been reported in c-axis oriented Pb(Zr,Ti)O-3 thin films with morphotropic phase boundary composition [Fu , Appl. Phys. Lett. 80, 3572 (2002)]. Our analysis and experimental results show that, in comparison with other methods commonly used to investigate piezoelectric response of thin films, the charge integration technique used by Fu may lead to an order of magnitude higher apparent piezoelectric coefficients if the substrate on which

Piezoelectric micromachined ultrasonic transducers for airborne and immersed applications working in the frequency range from 20 kHz in liquid to 750 kHz in air have been fabricated and characterized, as well as simulated by finite element modelling. The basic element consisted of a oxidized and platinized silicon membrane coated with a 2 mum thick (100)-textured Pb(Zr,Ti)O-3 (PZT) thin film deposited by sol-gel techniques. SOI wafers have been applied to obtain a good definition of the silicon part of the

An electrically pumped VCSEL (10) and a method of its fabrication are presented. The VCSEL (10) comprises an active cavity material (14) sandwiched between top and bottom DBR stacks (12a, 12b), the top DBR (12b) having at least one n-semiconductor layer. The device defines an aperture region (25) between the structured surface (14b) of the active cavity material (14) and the n-semiconductor layer of the top DBR stack (12b). The structured surface (14b) is formed by a top surface of a mesa (22) that includes

Improved Screening Ability of Ferroelectric-Semiconductor Interface

Chattez avec Graph Search

Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss

The Hysteretic Ferroelectric Tunnel FET

Controlling photo-activity of solution-processed hematite electrodes for solar water splitting

An Introduction To The Technology Of Thin Film Silicon Photovoltaics

Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs

High performance low-firing temperature thick-film pressure sensors on steel

High-speed Si resonant cavity enhanced photodetectors and arrays

Electronic surface structure of n-ML Ag/Cu(111) and Cs/n-ML Ag/Cu(111) as investigated by 2PPE and STS

Electrochemical investigation of ion implanted p-Si

Piezoelectric response of thin films determined by charge integration technique: Substrate bending effects

Simulation and characterization of piezoelectric micromachined ultrasonic transducers (PMUT's) based on PZT/SOI membranes

Vertical cavity surface emitting laser