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a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy

Publications associées (31)

Composition and Interface Engineering of High Performing Perovskite Solar Cells

Perovskite solar cells have been established as a disruptive technology in the domain of photo-voltaics. Their facile, low-temperature processing and high-power conversion efficiency make them stand-out among other mature solar technologies. The performanc ...

EPFL2022

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Dirk Grundler, Ping Che, Simon Robert Escobar Steinvall, Andrea Mucchietto, Rajrupa Paul, Mohammad Hamdi

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Diamond on GaN integration for power semiconductor devices with efficient thermal management

Reza Soleiman Zadeh Ardebili

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

EPFL2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Pirouz Sohi, Reza Soleiman Zadeh Ardebili, Taifang Wang, Catherine Erine, Remco Franciscus Peter van Erp, Luca Nela, Alessandro Floriduz

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

IEEE2021

Vapor Transport Deposition of Methylammonium Iodide for Perovskite Solar Cells

Christophe Ballif, Quentin Thomas Jeangros, Cédric Bucher, Florent Sahli, Léo Duchêne, Björn Niesen, Aymeric Michel Schafflützel, Nathanaël Miaz, Quentin Jean-Marie Armand Guesnay, Niccolo Salsi

Vapor-based processes are promising options to deposit metal halide perovskite solar cells in an industrial environment due to their ability to deposit uniform layers over large areas in a controlled environment without resorting to the use of (possibly to ...

2021

Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Michal Daniel Macha, Cheol Yeon Cheon, Zhenyu Wang, Guilherme Migliato Marega, Mukesh Kumar Tripathi, Hyungoo Ji

Metallic two-dimensional (2D) transition metal dichalcogenides (TMDCs) are attracting great attention because of their interesting low-temperature properties such as superconductivity, magnetism, and charge density waves (CDW). However, further studies and ...

2021

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Elison de Nazareth Matioli, Minghua Zhu, Riyaz Mohammed Abdul Khadar, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

Institute of Electrical and Electronics Engineers2021

An Experimental Setup for Heterogeneous Catalysis on Atomically Defined Metal Nanostructures

Jean-Guillaume De Groot

The main objective of this PhD thesis is to link the atomic scale structure to the catalytic properties of self-assembled nanostructures. The growth and characterization of these nanostructures was carried out in an ultra-high vacuum (UHV) chamber initiall ...

EPFL2021

Laser soliton microcombs heterogeneously integrated on silicon

Rui Ning Wang, Tobias Kippenberg, Chao Xiang, Junqiu Liu, Wenle Weng, Zeyu Zhang, Zeyu Zhang

Silicon photonics enables wafer-scale integration of optical functionalities on chip. Silicon-based laser frequency combs can provide integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent light detection ...

American Association for the Advancement of Science2021