Publication

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Publications associées (31)

Electronic Transport in 2D Materials with Strong Spin-orbit Coupling

The thesis describes the computational study of structural, electonic and transport properties of monolayer transition metal dichalcogenides (TMDs) in the stable 2H and the metastable 1T' phases. Several aspects have been covered by the study including the ...

EPFL2017

Band Alignment Engineering at Cu2O/ZnO Heterointerfaces

Michael Graetzel, Stanley David Tilley

Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semiconductor devices, yet the search for material combinations with suitable band alignments remains a challenge for numerous applications. In this work, we de ...

Amer Chemical Soc2016

Momentum-Resolved Spin Dynamics of Bulk and Surface Excited States in the Topological Insulator Bi2Se3

Helmuth Berger, Philippe Bugnon, Marco Grioni, Alberto Crepaldi

The prospect of optically inducing and controlling a spin-polarized current in spintronic devices has generated wide interest in the out-of-equilibrium electronic and spin structure of topological insulators. In this Letter we show that only measuring the ...

Amer Physical Soc2015

Bipolar Conductance Switching of Single Anthradithiophene Molecules

Klaus Kern, Uta Schlickum, Peter Wahl, Hagen Klauk, Ivan Pentegov, Verena Katharina Schendel

Single molecular switches are basic device elements in organic electronics. The pentacene analogue anthradithiophene (ADT) shows a fully reversible binary switching between different adsorption conformations on a metallic surface accompanied by a charge tr ...

Amer Chemical Soc2015

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Alfredo Pasquarello, Davide Colleoni, Giacomo Francesco Leonardo Miceli

Using density functional calculations, we study a set of candidate defects for Fermi-level pinning at GaAs/oxide interfaces. The set of considered defects comprises both bulklike and interfacial defects, including As antisites, Ga and As dangling bonds, th ...

American Physical Society2015

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

Davide Colleoni

Gallium arsenide is currently under scrutiny for replacing silicon in microelectronic devices due to its high carrier mobilities. However, the widespread use of this semiconductor is hampered by the intrinsic difficulty of producing high-quality interfaces ...

EPFL2015

Calculation of the Energy Band Diagram of a Photoelectrochemical Water Splitting Cell

Michael Graetzel, Matthias Schmid, Stanley David Tilley

A physical model is presented for the semiconductor electrode of a photoelectrochemical cell. The model accounts for the potential drop in the Helmholtz layer and thus enables description of both band edge pinning and unpinning. The model is based on the c ...

American Chemical Society2014

Correlations and renormalization of the electron-phonon coupling in the honeycomb Hubbard ladder and superconductivity in polyacene

Ronny Thomale

We have performed extensive density matrix renormalization group (DMRG) studies of the Hubbard model on a honeycomb ladder. The band structure (with Hubbard U = 0) exhibits an unusual quadratic band touching at half-filling, which is associated with a quan ...

Amer Physical Soc2013

Temperature-dependent electron-phonon coupling in La_{2−x}Sr_{x}CuO_{4} probed by femtosecond x-ray diffraction

Majed Chergui, Paul Beaud, Mathieu Julien Gino Cottet, Krunoslav Prsa, Henrik Moodysson Rønnow, Fabrizio Carbone, Kazimierz Conder, Giulia Fulvia Mancini

The strength of the electron-phonon coupling parameter and its evolution throughout a solid's phase diagram often determines phenomena such as superconductivity, charge- and spin-density waves. Its experimental determination relies on the ability to distin ...

Amer Physical Soc2013

Opening of a Peierls gap in BaVS3 probed by V L-3 edge resonant inelastic x-ray scattering

Helmuth Berger, Marco Grioni, Marco Guarise, Thorsten Schmitt

V L-3 edge resonant inelastic x-ray scattering measurements performed on high quality BaVS3 single crystals reveal that the intra-t(2g) dd excitations close to the elastic peak are suppressed below the metal-insulator transition induced by the Peierls inst ...

Iop Publishing Ltd2013

Evolution from a Nodeless Gap to d(x2-y2)-Wave in Underdoped La2-xSrxCuO4

Joël Mesot, Elia Razzoli, Johan Juul Chang

Using angle-resolved photoemission spectroscopy (ARPES), it is revealed that the low-energy electronic excitation spectra of highly underdoped superconducting and nonsuperconducting La2-xSrxCuO4 cuprates are gapped along the entire underlying Fermi surface ...

Amer Physical Soc2013